APA (7th ed.) Citation

Witulski, A. F., Ball, D. R., Galloway, K. F., Javanainen, A., Lauenstein, J., Sternberg, A. L., & Schrimpf, R. D. (2018). Single-Event Burnout Mechanisms in SiC Power MOSFETs. IEEE transactions on nuclear science, 65(8), 1951-1955. https://doi.org/10.1109/TNS.2018.2849405

Chicago Style (17th ed.) Citation

Witulski, Arthur F., Dennis R. Ball, Kenneth F. Galloway, Arto Javanainen, Jean-Marie Lauenstein, Andrew L. Sternberg, and Ronald D. Schrimpf. "Single-Event Burnout Mechanisms in SiC Power MOSFETs." IEEE Transactions on Nuclear Science 65, no. 8 (2018): 1951-1955. https://doi.org/10.1109/TNS.2018.2849405.

MLA (9th ed.) Citation

Witulski, Arthur F., et al. "Single-Event Burnout Mechanisms in SiC Power MOSFETs." IEEE Transactions on Nuclear Science, vol. 65, no. 8, 2018, pp. 1951-1955, https://doi.org/10.1109/TNS.2018.2849405.