Enhancement of Photoluminescence in MoS2 on Ag Nanowires due to the Surface Plasmon Effect
Monolayer (ML) molybdenum disulfide (MoS 2 ) is a promising material for next-generation optoelectronic applications because MoS 2 exhibits remarkable electronic and optical properties owing to its flexibility and direct bandgap. Despite these outstanding properties, MoS 2 has limitations in fabrica...
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| Published in | Journal of the Korean Physical Society Vol. 75; no. 10; pp. 801 - 805 |
|---|---|
| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Seoul
The Korean Physical Society
01.11.2019
Springer Nature B.V 한국물리학회 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0374-4884 1976-8524 |
| DOI | 10.3938/jkps.75.801 |
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| Abstract | Monolayer (ML) molybdenum disulfide (MoS
2
) is a promising material for next-generation optoelectronic applications because MoS
2
exhibits remarkable electronic and optical properties owing to its flexibility and direct bandgap. Despite these outstanding properties, MoS
2
has limitations in fabricating optoelectronic devices because of its low quantum yield. To overcome these limitations, we propose a photoluminescence (PL) enhancement technique using a surface plasmon effect induced by transferring ML MoS
2
onto Ag nanowires (NWs). We observed the surface-enhanced PL signals from ML MoS
2
on Ag NWs and investigated the effect of the diameter of the latter. Furthermore, we explored the origin of efficient PL enhancement using Ag NWs through theoretical simulations. Our experimental and theoretical studies are useful for the application of ML transition-metal dichalcogenides in flexible nano-optoelectronics. |
|---|---|
| AbstractList | Monolayer (ML) molybdenum disulfide (MoS
2
) is a promising material for next-generation optoelectronic applications because MoS
2
exhibits remarkable electronic and optical properties owing to its flexibility and direct bandgap. Despite these outstanding properties, MoS
2
has limitations in fabricating optoelectronic devices because of its low quantum yield. To overcome these limitations, we propose a photoluminescence (PL) enhancement technique using a surface plasmon effect induced by transferring ML MoS
2
onto Ag nanowires (NWs). We observed the surface-enhanced PL signals from ML MoS
2
on Ag NWs and investigated the effect of the diameter of the latter. Furthermore, we explored the origin of efficient PL enhancement using Ag NWs through theoretical simulations. Our experimental and theoretical studies are useful for the application of ML transition-metal dichalcogenides in flexible nano-optoelectronics. Monolayer (ML) molybdenum disulfide (MoS2) is a promising material for next-generation optoelectronic applications because MoS2 exhibits remarkable electronic and optical properties owing to its flexibility and direct bandgap. Despite these outstanding properties, MoS2 has limitations in fabricating optoelectronic devices because of its low quantum yield. To overcome these limitations, we propose a photoluminescence (PL) enhancement technique using a surface plasmon effect induced by transferring ML MoS2 onto Ag nanowires (NWs). We observed the surface-enhanced PL signals from ML MoS2 on Ag NWs and investigated the effect of the diameter of the latter. Furthermore, we explored the origin of efficient PL enhancement using Ag NWs through theoretical simulations. Our experimental and theoretical studies are useful for the application of ML transition-metal dichalcogenides in flexible nano-optoelectronics. KCI Citation Count: 0 Monolayer (ML) molybdenum disulfide (MoS2) is a promising material for next-generation optoelectronic applications because MoS2 exhibits remarkable electronic and optical properties owing to its flexibility and direct bandgap. Despite these outstanding properties, MoS2 has limitations in fabricating optoelectronic devices because of its low quantum yield. To overcome these limitations, we propose a photoluminescence (PL) enhancement technique using a surface plasmon effect induced by transferring ML MoS2 onto Ag nanowires (NWs). We observed the surface-enhanced PL signals from ML MoS2 on Ag NWs and investigated the effect of the diameter of the latter. Furthermore, we explored the origin of efficient PL enhancement using Ag NWs through theoretical simulations. Our experimental and theoretical studies are useful for the application of ML transition-metal dichalcogenides in flexible nano-optoelectronics. |
| Author | An, Sung-Jin Park, Dae Young Yang, Kihyuk Park, Chulho Lee, Chanwoo Jeong, Byeong Geun Yu, Hyang Mi Jeong, Mun Seok Lee, Seung Mi |
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| CitedBy_id | crossref_primary_10_1002_sia_7264 crossref_primary_10_1016_j_optlastec_2021_107092 crossref_primary_10_1021_acs_jpcc_3c04237 crossref_primary_10_1016_j_cap_2021_11_002 |
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| Snippet | Monolayer (ML) molybdenum disulfide (MoS
2
) is a promising material for next-generation optoelectronic applications because MoS
2
exhibits remarkable... Monolayer (ML) molybdenum disulfide (MoS2) is a promising material for next-generation optoelectronic applications because MoS2 exhibits remarkable electronic... |
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| SubjectTerms | Energy gap Mathematical and Computational Physics Molybdenum disulfide Nanowires Optical properties Optoelectronic devices Particle and Nuclear Physics Photoluminescence Physics Physics and Astronomy Silver Theoretical Transition metal compounds 물리학 |
| Title | Enhancement of Photoluminescence in MoS2 on Ag Nanowires due to the Surface Plasmon Effect |
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