Systematic determination of the thickness of a thin oxide layer on a multilayered structure by using an X-ray reflectivity analysis

• Published in: Journal of the Korean Physical Society Vol. 69; no. 5; pp. 789 - 792
• Main Authors: Lee, Jisung, Park, Sungkyun
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.09.2016; Springer Nature B.V; 한국물리학회
• Subjects: Ferrous alloys; Mathematical and Computational Physics; Oxidation; Particle and Nuclear Physics; Physics; Physics and Astronomy; Protective coatings; Reflectometry; Roughness; Silicon; Theoretical; Thickness; 물리학; 68.47.Gh; 68.35.Ct; Multilayer; X-ray reflectivity; 68.65.Ac; Oxidation; 68.55.jk; Interface
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.69.789

X-ray reflectometry was used to determine the chemical structure of oxidized Permalloy films grown at different oxidation times. The oxidation time-dependent thickness, roughness and chemical density of each layer were examined simultaneously using the Parratt formalism. With increasing oxidation time, the Permalloy thickness decreased while forming a new oxide layer. After oxidation for 40 sec, the Permalloy film’s thickness remained the same for further oxidation, indicating the formation of an oxidation barrier with a scattering length density much lower than that of the Permalloy. The interfacial roughness between the interface layer and the top protective layer remained the same regardless of the oxidation time.