Recent developments in Liquid Phase Electroepitaxial growth of bulk crystals under magnetic field

This review article presents recent developments in Liquid Phase Electroepitaxial (LPEE) growth of bulk single crystals of alloy semiconductors under an applied static magnetic field. The growth rate in LPEE is proportional to the applied electric current. However, at higher electric current levels...

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Published inComptes rendus. Mecanique Vol. 332; no. 5; pp. 413 - 428
Main Authors Dost, Sadik, Lent, Brian, Sheibani, Hamdi, Liu, Yongcai
Format Journal Article
LanguageEnglish
Published Elsevier SAS 01.05.2004
Subjects
Online AccessGet full text
ISSN1631-0721
1873-7234
DOI10.1016/j.crme.2004.02.019

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Abstract This review article presents recent developments in Liquid Phase Electroepitaxial (LPEE) growth of bulk single crystals of alloy semiconductors under an applied static magnetic field. The growth rate in LPEE is proportional to the applied electric current. However, at higher electric current levels the growth becomes unstable due to the strong convection occurring in the liquid zone. In order to address this problem, a significant body of research has been performed in recent years to suppress and control the natural convection for the purpose of prolonging the growth process to grow larger crystals. LPEE growth experiments show that the growth rate under an applied static magnetic field is also proportional and increases with the field intensity level. The modeling of LPEE growth under magnetic field was also the subject of interest. Two-dimensional mathematical models developed for the LPEE growth process predicted that the natural convection in the liquid zone would be suppressed almost completely with increasing the magnetic field level. However, experiments and also three-dimensional models have shown that there is an optimum magnetic field level below which the growth process is stable and the convection in the liquid zone is suppressed, but above such a field level the convective flow becomes very strong and leads to unstable growth with unstable interfaces. To cite this article: S. Dost et al., C. R. Mecanique 332 (2004). Cet article présente une revue des développements récents en cristallogénèse par Electro-Epitaxie en Phase Liquide (LPEE), des monocristaux d'alliages semi-conducteurs, sous l'effet d'un champ magnétique statique. La vitesse de croissance est proportionnelle à l'intensité du courant électrique. Néanmoins, pour des courants élevés, la croissance devient instable, à cause de la convection forte dans la zone liquide. Il y a eu beaucoup de recherches ces dernières années pour diminuer et maı̂triser la convection naturelle et faire croı̂tre des cristaux plus grands. Les expériences de croissance par LPEE montrent que la vitesse de croissance sous champ magnétique est proportionnelle, à l'intensité du champ magnétique. La simulation numérique de la croissance par LPEE en présence d'un champ magnétique, fut également, un important objet de recherche. Les simulations numériques, en deux dimensions, prévoient que la convection naturelle est quasiment supprimée lorsque l'intensité du champ magnétique s'accroı̂t fortement. Or, des expériences et simulations tri-dimensionnelles montrent l'existence d'une valeur de l'intensité magnétique au-dessous de laquelle la croissance est stable et la convection est supprimée ; mais, à des intensités plus élevées, l'influence de la convection est très forte, ce qui conduit à une croissance irrégulière et des interfaces instables. Pour citer cet article : S. Dost et al., C. R. Mecanique 332 (2004).
AbstractList This review article presents recent developments in Liquid Phase Electroepitaxial (LPEE) growth of bulk single crystals of alloy semiconductors under an applied static magnetic field. The growth rate in LPEE is proportional to the applied electric current. However, at higher electric current levels the growth becomes unstable due to the strong convection occurring in the liquid zone. In order to address this problem, a significant body of research has been performed in recent years to suppress and control the natural convection for the purpose of prolonging the growth process to grow larger crystals. LPEE growth experiments show that the growth rate under an applied static magnetic field is also proportional and increases with the field intensity level. The modeling of LPEE growth under magnetic field was also the subject of interest. Two-dimensional mathematical models developed for the LPEE growth process predicted that the natural convection in the liquid zone would be suppressed almost completely with increasing the magnetic field level. However, experiments and also three-dimensional models have shown that there is an optimum magnetic field level below which the growth process is stable and the convection in the liquid zone is suppressed, but above such a field level the convective flow becomes very strong and leads to unstable growth with unstable interfaces. To cite this article: S. Dost et al., C. R. Mecanique 332 (2004). Cet article présente une revue des développements récents en cristallogénèse par Electro-Epitaxie en Phase Liquide (LPEE), des monocristaux d'alliages semi-conducteurs, sous l'effet d'un champ magnétique statique. La vitesse de croissance est proportionnelle à l'intensité du courant électrique. Néanmoins, pour des courants élevés, la croissance devient instable, à cause de la convection forte dans la zone liquide. Il y a eu beaucoup de recherches ces dernières années pour diminuer et maı̂triser la convection naturelle et faire croı̂tre des cristaux plus grands. Les expériences de croissance par LPEE montrent que la vitesse de croissance sous champ magnétique est proportionnelle, à l'intensité du champ magnétique. La simulation numérique de la croissance par LPEE en présence d'un champ magnétique, fut également, un important objet de recherche. Les simulations numériques, en deux dimensions, prévoient que la convection naturelle est quasiment supprimée lorsque l'intensité du champ magnétique s'accroı̂t fortement. Or, des expériences et simulations tri-dimensionnelles montrent l'existence d'une valeur de l'intensité magnétique au-dessous de laquelle la croissance est stable et la convection est supprimée ; mais, à des intensités plus élevées, l'influence de la convection est très forte, ce qui conduit à une croissance irrégulière et des interfaces instables. Pour citer cet article : S. Dost et al., C. R. Mecanique 332 (2004).
This review article presents recent developments in Liquid Phase Electroepitaxial (LPEE) growth of bulk single crystals of alloy semiconductors under an applied static magnetic field. The growth rate in LPEE is proportional to the applied electric current. However, at higher electric current levels the growth becomes unstable due to the strong convection occurring in the liquid zone. In order to address this problem, a significant body of research has been performed in recent years to suppress and control the natural convection for the purpose of prolonging the growth process to grow larger crystals. LPEE growth experiments show that the growth rate under an applied static magnetic field is also proportional and increases with the field intensity level. The modeling of LPEE growth under magnetic field was also the subject of interest. Two-dimensional mathematical models developed for the LPEE growth process predicted that the natural convection in the liquid zone would be suppressed almost completely with increasing the magnetic field level. However, experiments and also three-dimensional models have shown that there is an optimum magnetic field level below which the growth process is stable and the convection in the liquid zone is suppressed, but above such a field level the convective flow becomes very strong and leads to unstable growth with unstable interfaces.
Author Lent, Brian
Dost, Sadik
Sheibani, Hamdi
Liu, Yongcai
Author_xml – sequence: 1
  givenname: Sadik
  surname: Dost
  fullname: Dost, Sadik
  email: sdost@me.uvic.ca
  organization: Crystal Growth Laboratory, University of Victoria, Victoria V8W 3P6, BC, Canada
– sequence: 2
  givenname: Brian
  surname: Lent
  fullname: Lent, Brian
  organization: DL Crystals Inc., R-Hut, McKenzie Road, Victoria V8W 3W2, BC, Canada
– sequence: 3
  givenname: Hamdi
  surname: Sheibani
  fullname: Sheibani, Hamdi
  organization: Crystal Growth Laboratory, University of Victoria, Victoria V8W 3P6, BC, Canada
– sequence: 4
  givenname: Yongcai
  surname: Liu
  fullname: Liu, Yongcai
  organization: Crystal Growth Laboratory, University of Victoria, Victoria V8W 3P6, BC, Canada
BookMark eNp9kE1rHSEUhqUk0Hz0D3TlqruZqjNXHeimhDQtXEgpzVocPSbeOnqjTtL8-3i5XXWR1XnhvM-B85yjk5giIPSRkp4Syj_vepMX6BkhY09YT-j0Dp1RKYZOsGE8aZkPtCOC0ffovJQdIVRwKc6Q_gUGYsUWniCk_dJywT7irX9cvcU_H3QBfB3A1Jxg76v-63XA9zk91wecHJ7X8Aeb_FKqDgWv0ULGi76PUL3BzkOwl-jUtR18-Dcv0N23699X37vt7c2Pq6_bzgxsqp3jpH1COJPaSOsEm2a9mZhxZiP0PGhBRjEbySYpZjJOnDrJ7Dg7QayTk9DDBfp0vLvP6XGFUtXii4EQdIS0FjUwTjjfkFZkx6LJqZQMTu2zX3R-UZSog021Uweb6mBTEaaazQbJ_yDTZFSfYs3ah7fRL0cU2vdPHrIqxkM0YH1uXpVN_i38FWOBk_M
CitedBy_id crossref_primary_10_1080_14786430500363825
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crossref_primary_10_1039_c0ce00916d
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ContentType Journal Article
Copyright 2004 Académie des sciences
Copyright_xml – notice: 2004 Académie des sciences
DBID AAYXX
CITATION
7TB
7U5
8FD
FR3
KR7
L7M
DOI 10.1016/j.crme.2004.02.019
DatabaseName CrossRef
Mechanical & Transportation Engineering Abstracts
Solid State and Superconductivity Abstracts
Technology Research Database
Engineering Research Database
Civil Engineering Abstracts
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Civil Engineering Abstracts
Solid State and Superconductivity Abstracts
Engineering Research Database
Technology Research Database
Mechanical & Transportation Engineering Abstracts
Advanced Technologies Database with Aerospace
DatabaseTitleList
CrossRef
Civil Engineering Abstracts
DeliveryMethod fulltext_linktorsrc
Discipline Applied Sciences
Chemistry
DocumentTitleAlternate Développements récents en cristallogénèse par Electro-Epitaxie en Phase Liquide (LPEE) sous l'effet d'un champ magnétique
EISSN 1873-7234
EndPage 428
ExternalDocumentID 10_1016_j_crme_2004_02_019
S1631072104000476
GroupedDBID --K
--M
-~X
.~1
0R~
1B1
1RT
1~.
1~5
29F
4.4
457
4G.
5GY
5VS
7-5
71M
8P~
AACTN
AAEDT
AAEDW
AAFWJ
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAXUO
ABAOU
ABMAC
ABXDB
ABXRA
ABYKQ
ACDAQ
ACGFS
ACNCT
ADBBV
ADEZE
ADMUD
ADTZH
AECPX
AEKER
AENEX
AFFNX
AFPKN
AFTJW
AGHFR
AGUBO
AGYEJ
AI.
AIGVJ
AITUG
AJBFU
AJOXV
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
ARUGR
BLXMC
DU5
EBS
EFLBG
EJD
EO8
EO9
EP2
EP3
FDB
FEDTE
FIRID
FNPLU
G-Q
GBLVA
GROUPED_DOAJ
HVGLF
HZ~
IHE
J1W
JJJVA
L7B
LN9
M41
MAGPM
MHUIS
MO0
N9A
NCXOZ
O-L
O9-
OAUVE
OK1
OZT
P-8
P-9
PC.
Q38
RIG
ROL
RPZ
SDF
SDG
SEM
SES
SEW
SSZ
T5K
VH1
~G-
AAYWO
AAYXX
ABWVN
ACRPL
ACVFH
ADCNI
ADNMO
ADRWJ
ADVLN
AEUPX
AEXTA
AFPUW
AIGII
AKBMS
AKRWK
AKYEP
CITATION
~HD
7TB
7U5
8FD
FR3
KR7
L7M
ID FETCH-LOGICAL-c329t-f601010628ac8df729ba592cfc57ab3a7047bc82987b04961f82d4bf70df897a3
IEDL.DBID .~1
ISSN 1631-0721
IngestDate Sat Sep 27 17:06:41 EDT 2025
Thu Apr 24 22:53:53 EDT 2025
Sat Oct 25 05:10:07 EDT 2025
Fri Feb 23 02:20:55 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 5
Keywords Crystal growth
Électro-épitaxie
Champ magnétique
Instability
Instabilité
Electroepitaxy
Cristallogénèse
Magnetic field
Convection
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c329t-f601010628ac8df729ba592cfc57ab3a7047bc82987b04961f82d4bf70df897a3
Notes ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
PQID 32606650
PQPubID 23500
PageCount 16
ParticipantIDs proquest_miscellaneous_32606650
crossref_primary_10_1016_j_crme_2004_02_019
crossref_citationtrail_10_1016_j_crme_2004_02_019
elsevier_sciencedirect_doi_10_1016_j_crme_2004_02_019
PublicationCentury 2000
PublicationDate 2004-05-01
PublicationDateYYYYMMDD 2004-05-01
PublicationDate_xml – month: 05
  year: 2004
  text: 2004-05-01
  day: 01
PublicationDecade 2000
PublicationTitle Comptes rendus. Mecanique
PublicationYear 2004
Publisher Elsevier SAS
Publisher_xml – name: Elsevier SAS
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SSID ssj0017687
Score 1.6537582
Snippet This review article presents recent developments in Liquid Phase Electroepitaxial (LPEE) growth of bulk single crystals of alloy semiconductors under an...
SourceID proquest
crossref
elsevier
SourceType Aggregation Database
Enrichment Source
Index Database
Publisher
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SubjectTerms Champ magnétique
Convection
Cristallogénèse
Crystal growth
Electroepitaxy
Instability
Instabilité
Magnetic field
Électro-épitaxie
Title Recent developments in Liquid Phase Electroepitaxial growth of bulk crystals under magnetic field
URI https://dx.doi.org/10.1016/j.crme.2004.02.019
https://www.proquest.com/docview/32606650
Volume 332
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVESC
  databaseName: Elsevier ScienceDirect
  customDbUrl:
  eissn: 1873-7234
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0017687
  issn: 1631-0721
  databaseCode: .~1
  dateStart: 20021001
  isFulltext: true
  titleUrlDefault: https://www.sciencedirect.com
  providerName: Elsevier
– providerCode: PRVLSH
  databaseName: Elsevier Journals
  customDbUrl:
  mediaType: online
  eissn: 1873-7234
  dateEnd: 99991231
  omitProxy: true
  ssIdentifier: ssj0017687
  issn: 1631-0721
  databaseCode: AKRWK
  dateStart: 20020101
  isFulltext: true
  providerName: Library Specific Holdings
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8QwEA6iB734FtdnDt6kbtOm2_YoiyK-EB_oLSRp4lbXru52QS_-dmfaVFHEg9eSljKZxxfyzXyE7EgVmoRp5Unphx4kvMyTcdrxIl8mfqAhNjk2OJ-dd45u-PFddDdBuk0vDNIqXe6vc3qVrd2TtrNm-znP21eAJBhO90I39HmMY7c5j1HFYO_9k-bBAE5XAiuw2MPVrnGm5njp4VM1KpNXcztx2s7vxelHmq5qz-E8mXWgke7X_7VAJkyxSOYcgKQuPEeLZLrbyLctEQmAEAoKzb5YQSOaF_Q0fxnnGb3oQfmiB7UIjkHpkFfwRHoPp_KyRweWqnH_kerhG6DH_ohiq9mQPsn7ApseacV7WyY3hwfX3SPP6Sl4OgzS0rN4-GLYNCl1klmA1UpGaaCtjmLYMxmDFZVOgjSJFRwcOswmQcaVjf3MJmkswxUyWQwKs0qoTE0IsY_XsgmXjCmW2ii1NrChgTA3LcIaQwrtho2j5kVfNKyyB4HGRxVMLvxAgPFbZPfzned61Mafq6Nmf8Q3hxFQC_58b7vZTAE7gtcjsjCD8UgAkMV7KH_tn19eJzM1rQfZkBtkshyOzSYgllJtVS65Rab2Ty5vTz4AjVDq_A
linkProvider Elsevier
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT9tAEB5ReqCXUqBVU1qyh96QG68fsX1EEVGAgCqVSLmtdte7wTQ4aR5SufDbmbHXqUAVB67W2rLm-Y32mxmA71KFJuVaeVL6oYcBL_dkknW92JepH2j0zYganC-vuoNRdD6Ox1vQa3phiFbpYn8d06to7Z50nDQ786Lo_EIkwWm6F5mhHyXdN_A2ioOEKrAfDxueB0c8XW1YwdMeHXedMzXJSy_uqlmZUTW4k8bt_D87PYvTVfLpf4D3DjWyk_rH9mDLlPuw6xAkc_653IedXrO_7QAkIkLMKCz_RwtasqJkw-LPusjZzxvMX-y03oJjaHfIXzRFNsGyfHXDZpap9fQ304t7hI_TJaNeswW7k5OSuh5ZRXz7CKP-6XVv4LmFCp4Og2zlWaq-OHVNSp3mFnG1knEWaKvjBJUmExSj0mmQpYnCyqHLbRrkkbKJn9s0S2T4CbbLWWk-A5OZCdH56V42jSTnimc2zqwNbGjQz00LeCNIod20cVp6MRUNrexWkPBpDWYk_ECg8FtwvHlnXs_aePF03OhHPLEYgcngxffajTIFaoTuR2RpZuulQCRLF1H-l1d-uQ07g-vLoRieXV0cwrua40PUyK-wvVqszTeELyt1VJnnIwlb7Hw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Recent+developments+in+Liquid+Phase+Electroepitaxial+growth+of+bulk+crystals+under+magnetic+field&rft.jtitle=Comptes+rendus.+Mecanique&rft.au=Dost%2C+Sadik&rft.au=Lent%2C+Brian&rft.au=Sheibani%2C+Hamdi&rft.au=Liu%2C+Yongcai&rft.date=2004-05-01&rft.issn=1631-0721&rft.eissn=1873-7234&rft.volume=332&rft.issue=5-6&rft.spage=413&rft.epage=428&rft_id=info:doi/10.1016%2Fj.crme.2004.02.019&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_crme_2004_02_019
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1631-0721&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1631-0721&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1631-0721&client=summon