Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

• Published in: Applied physics letters Vol. 108; no. 23
• Main Authors: Cho, Minkyu, Seo, Jung-Hun, Park, Dong-Wook, Zhou, Weidong, Ma, Zhenqiang
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 06.06.2016
• Subjects: Aluminum oxide; Applied physics; Basic oxides; Bending machines; Capacitance-voltage characteristics; Charge density; Compressive properties; Field effect transistors; Germanium; Metal oxide semiconductors; MOS devices; MOSFETs; Semiconductor devices; Silicon dioxide; Strain; Substrates; Thin film transistors; Threshold voltage; Transistors
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4953458

Metal-oxide-semiconductor (MOS) device is the basic building block for field effect transistors (FET). The majority of thin-film transistors (TFTs) are FETs. When MOSFET are mechanically bent, the MOS structure will be inevitably subject to mechanical strain. In this paper, flexible MOS devices using single crystalline Silicon (Si) and Germanium (Ge) nanomembranes (NM) with SiO2, SiO, and Al2O3 dielectric layers are fabricated on a plastic substrate. The relationships between semiconductor nanomembranes and various oxide materials are carefully investigated under tensile/compressive strain. The flatband voltage, threshold voltage, and effective charge density in various MOS combinations revealed that Si NM−SiO2 configuration shows the best interface charge behavior, while Ge NM−Al2O3 shows the worst. This investigation of flexible MOS devices can help us understand the impact of charges in the active region of the flexible TFTs and capacitance changes under the tensile/compressive strains on the change in electrical characteristics in flexible NM based TFTs.