Post-deposition-annealing effect on current conduction in Al2O3 films formed by atomic layer deposition with H2O oxidant - Hiraiwa, Atsushi; Matsumura, Daisuke; Okubo, Satoshi; Kawarada, Hiroshi (Journal of applied physics, 2017)
Keywords: Aluminum oxide; Annealing; Applied physics; Atomic layer epitaxy; Emission analysis; Emissions control; Field emission; Insulators; Leakage current; Permittivity; Semiconductor devices; Silicon dioxide