APA (7th ed.) Citation

Hiraiwa, A., Matsumura, D., Okubo, S., & Kawarada, H. (2017). Post-deposition-annealing effect on current conduction in Al2O3 films formed by atomic layer deposition with H2O oxidant. Journal of applied physics, 121(7), . https://doi.org/10.1063/1.4976211

Chicago Style (17th ed.) Citation

Hiraiwa, Atsushi, Daisuke Matsumura, Satoshi Okubo, and Hiroshi Kawarada. "Post-deposition-annealing Effect on Current Conduction in Al2O3 Films Formed by Atomic Layer Deposition with H2O Oxidant." Journal of Applied Physics 121, no. 7 (2017). https://doi.org/10.1063/1.4976211.

MLA (9th ed.) Citation

Hiraiwa, Atsushi, et al. "Post-deposition-annealing Effect on Current Conduction in Al2O3 Films Formed by Atomic Layer Deposition with H2O Oxidant." Journal of Applied Physics, vol. 121, no. 7, 2017, https://doi.org/10.1063/1.4976211.