Surface analysis of yttrium oxyfluoride deposited via air plasma spraying for Erosion resistance against NF3 plasma

• Published in: Hanʼguk Seramik Hakhoe chi Vol. 61; no. 1; pp. 63 - 70
• Main Authors: Kreethi, R., Hwang, Yu-Jin, Lee, Ho-Young, Park, Jae-Hyuk, Lee, Kee-Ahn
• Format: Journal Article
• Language: English
• Published: Singapore Springer Nature Singapore 01.01.2024
• Subjects: Ceramics; Chemistry and Materials Science; Composites; Glass; Materials Science; Natural Materials; Original Article; NF; Solid-state wet chemical process; Atmospheric plasma spray; Plasma resistance; Yttrium oxyfluoride; plasma etching
• ISSN: 1229-7801; 2234-0491
• DOI: 10.1007/s43207-023-00332-2

The plasma-resistant properties of surfaces coated with synthesized and commercial yttrium oxyfluoride materials, respectively, were investigated by exposing them to fluorine-based NF 3 plasma. Yttrium oxyfluoride (YOF) powder (30.8 μm, 99.8% purity), synthesized via a solid-state wet chemical process, and commercially available YOF powder (31.0 μm, 99.9%, purity) were used as spraying materials for deposition on aluminum (Al) substrates using the atmospheric plasma spraying (APS) technique. PECVD-NF 3 plasma was used to study the etching resistance of the YOF coating samples. The surface morphology and phase compositions of these coatings, and their ability to resist fluoro-based plasma etching were systematically characterized by various techniques. X-ray photoelectron spectroscopy (XPS) revealed variations in the elemental and chemical compositions of the coated surfaces of the two YOF specimens after fluorination. After exposure to plasma, the relative intensity ratio of Y–F to Y–O peaks of the synthesized and commercial YOF coatings were 1.37 and 1.35, respectively. These results indicate that the synthesized YOF coating treated with NF 3 plasma offers higher resistance against plasma than the commercial YOF coating, and thus accumulates fewer contamination particles. The synthesized YOF ceramic material therefore is a promising candidate for application as chamber coating material, for example in the semiconductor manufacturing process.