Compact Thermal Failure Model for Devices Subject to Electrostatic Discharge Stresses

• Published in: IEEE transactions on electron devices Vol. 62; no. 12; pp. 4128 - 4134
• Main Authors: Yuanzhong Zhou, Meng Miao, Salcedo, Javier A., Hajjar, Jean-Jacques, Liou, Juin J.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuit simulation; Circuits; Devices; Electrostatic discharges; Energy dissipation; Failure; Heat transfer; Mathematical analysis; Mathematical models; Stresses; Waveforms; thermal network; junction thermal failure; transmission line pulsing (TLP); Circuit simulation; compact model; electrostatic discharge (ESD)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2015.2491223

A leading cause of device failure under electrostatic discharge stress conditions is thermal failure. This failure occurs as a result of excessive energy dissipation which raises the temperature of the device to a critical breaking level. To predict such a physical failure at circuit level, a compact model compatible with circuit simulators is proposed. The model is derived from the fundamental heat transfer equations and is shown to accurately predict thermal failure for arbitrary electrical stress waveforms.