Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM - 潘霄宇 郭红霞 罗尹虹 张凤祁 丁李利 魏佳男 赵雯 (Chinese physics B, 2017)
Keywords: CMOS; displacement damage; neutron irradiation; single event latchup; SRAM; TCAD simulation; 中子辐照; 位移; 单粒子; 少数载流子寿命; 损伤; 灵敏度