Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM
Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact...
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| Published in | Chinese physics B Vol. 26; no. 1; pp. 542 - 546 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Chinese Physical Society and IOP Publishing Ltd
2017
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/26/1/018501 |
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| Abstract | Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation. |
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| AbstractList | Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation. |
| Author | 潘霄宇 郭红霞 罗尹虹 张凤祁 丁李利 魏佳男 赵雯 |
| AuthorAffiliation | Northwest Institute of Nuclear Technology, Xi＇an 710024, China |
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| Cites_doi | 10.1109/TNS.2011.2171366 10.1109/TNS.1979.4330228 10.1109/TNS.1981.4331544 10.1109/TNS.2012.2218617 10.1109/TNS.1980.4331097 10.1109/TNS.1979.4330275 10.1109/TNS.1979.4330274 10.1109/TNS.2003.821607 10.1109/TNS.2013.2255312 |
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| Copyright | 2017 Chinese Physical Society and IOP Publishing Ltd |
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| DocumentTitleAlternate | Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM |
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| Notes | Xiao-Yu Pan,Hong-Xia Guo,Yin-Hong Luo,Feng-Qi Zhang,Li-Li Ding,Jia-Nan Wei,Wen Zhao（ Northwest Institute of Nuclear Technology, Xi＇an 710024, China） displacement damage; neutron irradiation; single event latchup; TCAD simulation Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation. 11-5639/O4 |
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| References | Adams J R (4) 1979; 26 Gaspard N J (8) 2011; 58 Spratt J P (5) 2003; 50 Eddy J K (6) 1981; 28 Buchner S P (9) 2013; 60 Johnston A H (1) 1993 Ochoa A (2) 1979; 26 Srour J R (10) 1979; 26 Gadlage M J (7) 2012; 59 Schroeder J E (3) 1980; 27 |
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| Snippet | Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron... |
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| StartPage | 542 |
| SubjectTerms | CMOS displacement damage neutron irradiation single event latchup SRAM TCAD simulation 中子辐照 位移 单粒子 少数载流子寿命 损伤 灵敏度 |
| Title | Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM |
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