Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM
Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact...
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Published in | Chinese physics B Vol. 26; no. 1; pp. 542 - 546 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
Chinese Physical Society and IOP Publishing Ltd
2017
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Subjects | |
Online Access | Get full text |
ISSN | 1674-1056 2058-3834 |
DOI | 10.1088/1674-1056/26/1/018501 |
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Summary: | Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation. |
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Bibliography: | Xiao-Yu Pan,Hong-Xia Guo,Yin-Hong Luo,Feng-Qi Zhang,Li-Li Ding,Jia-Nan Wei,Wen Zhao( Northwest Institute of Nuclear Technology, Xi'an 710024, China) displacement damage; neutron irradiation; single event latchup; TCAD simulation Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation. 11-5639/O4 |
ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/26/1/018501 |