Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact...

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Published inChinese physics B Vol. 26; no. 1; pp. 542 - 546
Main Author 潘霄宇 郭红霞 罗尹虹 张凤祁 丁李利 魏佳男 赵雯
Format Journal Article
LanguageEnglish
Published Chinese Physical Society and IOP Publishing Ltd 2017
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/1/018501

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Summary:Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.
Bibliography:Xiao-Yu Pan,Hong-Xia Guo,Yin-Hong Luo,Feng-Qi Zhang,Li-Li Ding,Jia-Nan Wei,Wen Zhao( Northwest Institute of Nuclear Technology, Xi'an 710024, China)
displacement damage; neutron irradiation; single event latchup; TCAD simulation
Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/1/018501