Development of a massively parallel electron beam write (MPEBW) system: aiming for the digital fabrication of integrated circuits

• Published in: Japanese Journal of Applied Physics Vol. 61; no. SD; p. SD0807
• Main Authors: Esashi, Masayoshi, Miyaguchi, Hiroshi, Kojima, Akira, Ikegami, Naokatsu, Koshida, Nobuyoshi, Ohyi, Hideyuki
• Format: Journal Article
• Language: English
• Published: Tokyo IOP Publishing 01.06.2022; Japanese Journal of Applied Physics
• Subjects: Active control; Arrays; Driver circuits; electron beam; Electron beams; electron emitter array; Electron optics; Electrons; Emitters; Emitters (electron); Integrated circuits; LSI for active matrix control; maskless lithography; Prototyping; Silicon
• ISSN: 0021-4922; 1347-4065
• DOI: 10.35848/1347-4065/ac4ce1

A prototype of a massively parallel electron beam write (MPEBW) system has been developed for maskless (direct-write) lithography. A 100 × 100 array of nanocrystalline silicon (nc-Si) electron emitters is controlled by an active matrix-driving large-scale integrated device. This device is designed so that arrayed electron beams are reduced by a factor of 100 using electron optics and focused onto the wafer as 10 nm square spots. The electron beam emitter array has an aberration correction function. A planar 10 μ m square nc-Si emitter array and the driving LSI device were fabricated and their operations were confirmed. A 17 × 17 nc-Si emitter array was assembled with driver circuits and used to perform active matrix electron beam exposure in a 1:1 exposure test system. A Pierce emitter array for the active matrix drive is the subject of the target commercial system. The operations of the Pierce emitter array were studied using basic prototyping and simulation.