Magnetic Resonance of Impurities, Intrinsic Defects and Dopants in ZnO
In the last years an increasing technological interest in the wide band gap semiconductor ZnO has widely stimulated research on this material. The electrical and optical properties of ZnO are strongly affected by the presence of defects and dopant. For instance, to obtain p -type conductivity it req...
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| Published in | Applied magnetic resonance Vol. 39; no. 1-2; pp. 137 - 150 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Vienna
Springer Vienna
01.10.2010
Springer Nature B.V |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0937-9347 1613-7507 |
| DOI | 10.1007/s00723-010-0142-z |
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| Abstract | In the last years an increasing technological interest in the wide band gap semiconductor ZnO has widely stimulated research on this material. The electrical and optical properties of ZnO are strongly affected by the presence of defects and dopant. For instance, to obtain
p
-type conductivity it requires not only to find a suitable doping element but also to suppress counteracting intrinsic defects. Magnetic resonance experiments can contribute considerable knowledge to this subject. We review the current knowledge on impurities, intrinsic defects and doping elements in ZnO as obtained by magnetic resonance experiments in this paper. |
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| AbstractList | In the last years an increasing technological interest in the wide band gap semiconductor ZnO has widely stimulated research on this material. The electrical and optical properties of ZnO are strongly affected by the presence of defects and dopant. For instance, to obtain p-type conductivity it requires not only to find a suitable doping element but also to suppress counteracting intrinsic defects. Magnetic resonance experiments can contribute considerable knowledge to this subject. We review the current knowledge on impurities, intrinsic defects and doping elements in ZnO as obtained by magnetic resonance experiments in this paper. In the last years an increasing technological interest in the wide band gap semiconductor ZnO has widely stimulated research on this material. The electrical and optical properties of ZnO are strongly affected by the presence of defects and dopant. For instance, to obtain p -type conductivity it requires not only to find a suitable doping element but also to suppress counteracting intrinsic defects. Magnetic resonance experiments can contribute considerable knowledge to this subject. We review the current knowledge on impurities, intrinsic defects and doping elements in ZnO as obtained by magnetic resonance experiments in this paper. |
| Author | Stehr, J. E. Hofmann, D. M. Meyer, B. K. |
| Author_xml | – sequence: 1 givenname: J. E. surname: Stehr fullname: Stehr, J. E. organization: Physics Institute, Justus-Liebig-University-Giessen – sequence: 2 givenname: B. K. surname: Meyer fullname: Meyer, B. K. organization: Physics Institute, Justus-Liebig-University-Giessen – sequence: 3 givenname: D. M. surname: Hofmann fullname: Hofmann, D. M. email: detlev.m.hofmann@physik.uni-giessen.de organization: Physics Institute, Justus-Liebig-University-Giessen |
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| Keywords | Shallow Donor Hyperfine Interaction Electron Paramagnetic Resonance Oxygen Vacancy Electron Paramagnetic Resonance Spectrum |
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| SubjectTerms | Asymmetry Atoms and Molecules in Strong Fields Defects Dopants Doping Electrons Impurities Laser Matter Interaction Magnetic fields Magnetic resonance Metals Optical properties Organic Chemistry Physical Chemistry Physics Physics and Astronomy Point defects Semiconductors Solid State Physics Spectroscopy/Spectrometry Spectrum analysis Symmetry Zinc Zinc oxide |
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| Title | Magnetic Resonance of Impurities, Intrinsic Defects and Dopants in ZnO |
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