Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity
Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parame...
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| Published in | Journal of electronic materials Vol. 47; no. 2; pp. 1030 - 1037 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
Springer US
01.02.2018
Springer Nature B.V |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0361-5235 1543-186X |
| DOI | 10.1007/s11664-017-5982-y |
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| Abstract | Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parameters to physical stresses. The material stress-optic coefficient of silicon varies with crystallographic orientation. This variation poses a unique problem when measuring stresses in multicrystalline silicon (mc-Si) wafers. This paper concludes that the crystallographic orientation of silicon can be estimated by measuring the transmission of NIR light through the material. The transmission of NIR light through monocrystalline wafers of known orientation were compared with the transmission of NIR light through various grains in mc-Si wafers. X-ray diffraction was then used to verify the relationship by obtaining the crystallographic orientations of these assorted mc-Si grains. Variation of transmission intensity for different crystallographic orientations is further explained by using planar atomic density. The relationship between transmission intensity and planar atomic density appears to be linear. |
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| AbstractList | Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parameters to physical stresses. The material stress-optic coefficient of silicon varies with crystallographic orientation. This variation poses a unique problem when measuring stresses in multicrystalline silicon (mc-Si) wafers. This paper concludes that the crystallographic orientation of silicon can be estimated by measuring the transmission of NIR light through the material. The transmission of NIR light through monocrystalline wafers of known orientation were compared with the transmission of NIR light through various grains in mc-Si wafers. X-ray diffraction was then used to verify the relationship by obtaining the crystallographic orientations of these assorted mc-Si grains. Variation of transmission intensity for different crystallographic orientations is further explained by using planar atomic density. The relationship between transmission intensity and planar atomic density appears to be linear. |
| Author | Kumar, Arkadeep Danyluk, Steven Skenes, Kevin Prasath, R. G. R. |
| Author_xml | – sequence: 1 givenname: Kevin surname: Skenes fullname: Skenes, Kevin email: kskenes@citadel.edu organization: The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, The Citadel School of Engineering, The Citadel – sequence: 2 givenname: Arkadeep surname: Kumar fullname: Kumar, Arkadeep organization: The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology – sequence: 3 givenname: R. G. R. surname: Prasath fullname: Prasath, R. G. R. organization: The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology – sequence: 4 givenname: Steven surname: Danyluk fullname: Danyluk, Steven organization: The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology |
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| CitedBy_id | crossref_primary_10_1016_j_jmatprotec_2019_116267 crossref_primary_10_1016_j_mssp_2018_12_004 crossref_primary_10_1016_j_wear_2021_204186 crossref_primary_10_1016_j_wen_2020_03_006 crossref_primary_10_1007_s10854_024_12367_0 crossref_primary_10_1063_1_5037106 crossref_primary_10_1115_1_4052673 |
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| Keywords | NIR polariscope silicon x-ray diffraction crystallographic orientation Residual stress photovoltaics planar atomic density |
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| References_xml | – reference: K. Skenes, Ph.D. thesis, School of Mechanical Engineering, Georgia Institute of Technology (2014). – reference: KumarAPrasathRGRPogueVSkenesKYangCMelkoteSNDanylukSProc. Manuf.201651382 – reference: RameshKDigital Photoelasticity20001BristolIOP Publishing14610.1007/978-3-642-59723-7 – reference: KumarAMelkoteSNAppl. Phys. Lett.2017 – reference: KumarAKovalchenkoAPogueVPashchenkoEMelkoteSNProc. CIRP20164514710.1016/j.procir.2016.02.341 – reference: GanapatiVSchoenfelderSCastellanosSOenerSKoepgeRSampsonAMarcusMLaiBMorhennHHahnGBagdahnJBuonassisiTJ. Appl. Phys.2010 – reference: TippabhotlaSKRadchenkoIRengarajanKNIllyaGHandaraVKunzMTamuraNBudimanASProc. Eng.201613912310.1016/j.proeng.2015.09.241 – reference: BanerjeeADasDAppl. Surf. Sci.201533013410.1016/j.apsusc.2014.12.177 – reference: HeSZhengTDanylukSJ. Appl. Phys.200496310310.1063/1.1774259 – reference: W.H. Bragg and W.L. Bragg, in Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physics. Character 88, 428 (1913). – reference: MarshallDLawnBRJ. Mater. Sci.197914200110.1007/BF00551043 – reference: K. Skenes, F. Li, and S. Danyluk, in Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition, pp. 2082–2085 (2011). – reference: LeeGKimJ-YBudimanASTamuraNKunzMChenKBurekMJGreerJRTsuiTYActa Mater.201058136110.1016/j.actamat.2009.10.042 – reference: RamakrishnanVRameshKMeasurement2016871310.1016/j.measurement.2016.03.014 – reference: BudimanASNixWDTamuraNValekBCGadreKMaizJSpolenakRPatelJRAppl. Phys. Lett.20068823351510.1063/1.2210451 – reference: HandaraVARadchenkoITippabhotlaSKNarayananKRIllyaGKunzMTamuraNBudimanASSol. Energy Mater. Sol. Cells20171623010.1016/j.solmat.2016.12.028 – reference: KumarAMelkoteSNKaminskiSArconaCJ. Am. Ceram. Soc.2017100135010.1111/jace.14732 – reference: LimJRatnamMAzidIMutharasuDExp. 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| SubjectTerms | Characterization and Evaluation of Materials Chemistry and Materials Science Coefficient of variation Crystallography Deformation Destructive testing Electronics and Microelectronics Grains Instrumentation Light diffraction Materials research Materials Science Nondestructive testing Optical and Electronic Materials Orientation Physical stress Polycrystals Silicon Silicon wafers Solid State Physics Wafers |
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| Title | Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity |
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