Decay of charged complexes in quasi-2D semiconductor structures in the presence of electric fields

• Published in: Superlattices and microstructures Vol. 29; no. 6; pp. 379 - 384
• Main Authors: Monozon, B.S., Schmelcher, P.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.06.2001; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; nanostructures, impurities in semiconductors, tunnelling; Physics; nanostructures, impurities in semiconductors, tunnelling; Inorganic compounds; Excitons; Semiconductor materials; Gallium nitrides; Ternary compounds; Electric field effects; Binding energy; Analytical method; Theoretical study; Indium nitrides; Heterostructures
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1006/spmi.2001.0987

An analytical approach to the problem of a charged and weakly bound complex in a quasi-two-dimensional semiconductor structure subject to an electric field is developed. Using the zero-range potential method the red shift of the energy level of the extra electron and the detachment rate of the complex, both induced by the electric field, are calculated and provided in an explicit form. It is shown that the 2D charged complex is far more stable than we take in the analogous system in the bulk semiconductor in the presence of the electric field. Explicit values for donors in InGaN layers are presented.