Monolithic integration of a silica-based 16-channel VMUX/VDMUX on quartz substrate

A monolithic integrated variable attenuator multiplexer/demultiplexer is demonstrated. It is composed of a 16-channel 200 GHz silica-based arrayed waveguide grating and an array of Mach-Zehnder interferometer thermo-optic variable optical attenuators. The integrated device is fabricated on a quartz...

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Published inJournal of semiconductors Vol. 35; no. 10; pp. 70 - 73
Main Author 代红庆 安俊明 王玥 张家顺 王亮亮 王红杰 李建光 吴远大 钟飞 查强
Format Journal Article
LanguageEnglish
Published 01.10.2014
Subjects
16通道
Attenuators
Devices
Multiplexing
Noise levels
Power consumption
Quartz
Semiconductors
Silicon substrates
二氧化硅基
单片集成
可变光衰减器
多路复用器
石英衬底
阵列波导光栅
集成器件
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ISSN1674-4926
DOI10.1088/1674-4926/35/10/104010

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Summary:A monolithic integrated variable attenuator multiplexer/demultiplexer is demonstrated. It is composed of a 16-channel 200 GHz silica-based arrayed waveguide grating and an array of Mach-Zehnder interferometer thermo-optic variable optical attenuators. The integrated device is fabricated on a quartz substrate, which eliminates the process of depositing the undercladding layer and reduces the power consumption compared with a device fabricated on a silicon substrate. The insertion loss and crosstalk of the integrated device are -5 dB and less than -22 dB, respectively. The power consumption is only 110 mW at the attenuation of 20 dB per channel.
Bibliography:Dai Hongqing, An Junming, Wang Yue,Zhang Jiashun, Wang Liangliang,Wang Hongjie, Li Jianguang, Wu Yuanda,Zhong Fei,Zha Qiang（1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2Henan Shi Jia Photons Technology Co., Ltd, Hebi 458030, China）
A monolithic integrated variable attenuator multiplexer/demultiplexer is demonstrated. It is composed of a 16-channel 200 GHz silica-based arrayed waveguide grating and an array of Mach-Zehnder interferometer thermo-optic variable optical attenuators. The integrated device is fabricated on a quartz substrate, which eliminates the process of depositing the undercladding layer and reduces the power consumption compared with a device fabricated on a silicon substrate. The insertion loss and crosstalk of the integrated device are -5 dB and less than -22 dB, respectively. The power consumption is only 110 mW at the attenuation of 20 dB per channel.
11-5781/TN
monolithic integration; quartz substrate; VMUX/VDMUX; AWG; thermo-optic VOA
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SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/10/104010