Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes
In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au）...
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| Published in | Chinese physics B Vol. 23; no. 11; pp. 630 - 633 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/23/11/118507 |
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| Abstract | In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance. |
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| AbstractList | In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance. In this paper, a new equivalent circuit model of GaN-based light emitting diodes (LEDs) is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n-contact electrode materials (LEDs with Ni/Au and LEDs with Cr/Au) are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance. |
| Author | 马莉 沈光地 刘建朋 高志远 徐晨 王勋 |
| AuthorAffiliation | Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 1 O0124, China |
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| CitedBy_id | crossref_primary_10_1016_j_mssp_2018_04_020 |
| Cites_doi | 10.1063/1.2800290 10.1364/OE.19.015490 10.1143/JJAP.38.3976 10.1049/el:19991099 10.1088/1674-1056/20/10/108504 10.1063/1.1593218 10.1063/1.123546 10.1063/1.1351521 10.1117/12.871105 |
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| DocumentTitleAlternate | Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes |
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| Notes | GaN-based light emitting diodes, series resistance, luminous efficacy In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance. Ma Li, Shen Guang-Di, Liu Jian-Peng, Gao Zhi-Yuan, Xu Chen, and Wang Xun（ Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China） 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Neamen D A (9) 2007 1 2 5 6 Mukai T (4) 1999; 38 7 8 Lu T P (3) 2011; 20 10 |
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| Snippet | In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous... In this paper, a new equivalent circuit model of GaN-based light emitting diodes (LEDs) is established. The impact of the series resistance to luminous... |
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| SubjectTerms | Chromium Computer programs Computer simulation Equivalent circuits GaN Light-emitting diodes Luminous efficacy MATLAB Nickel Software 串联电阻 制造过程 发光二极管 发光效率 实验分析 等效电路模型 |
| Title | Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes |
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