Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors （IFs） of the HV-LE...

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Published inChinese physics B Vol. 21; no. 12; pp. 440 - 443
Main Author 郭伟玲 闫薇薇 朱彦旭 刘建朋 丁艳 崔德胜 吴国庆
Format Journal Article
LanguageEnglish
Published 01.12.2012
Subjects
Contact
Electric potential
Failure
Failure analysis
GaN
Intermediate frequency
Leakage
Light-emitting diodes
Scanning electron microscopy
Voltage
发光二极管
扫描电子显微镜
电气参数
电气特性
电特性
细胞数
高电压
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/12/127201

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Summary:In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors （IFs） of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined, The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of the failure cell is 76.8 Ω, while that of the normal cell is 21.3 Ω. The scanning electron microscope （SEM） image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LEDs needs to be optimized.
Bibliography:Guo Wei-Ling, Yan Wei-Wei, Zhu Yan-Xu, Liu Jian-Peng Ding Yan, Cui De-Sheng, and Wu Guo-Qing Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors （IFs） of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined, The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of the failure cell is 76.8 Ω, while that of the normal cell is 21.3 Ω. The scanning electron microscope （SEM） image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LEDs needs to be optimized.
11-5639/O4
high-voltage light-emitting diode, electrical characteristics, ideality factor, series resis-tance
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/12/127201