吴国庆, 郭. 闫. 朱. 刘. 丁. 崔. (2012). Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes. Chinese physics B, 21(12), 440-443. https://doi.org/10.1088/1674-1056/21/12/127201
Chicago Style (17th ed.) Citation吴国庆, 郭伟玲 闫薇薇 朱彦旭 刘建朋 丁艳 崔德胜. "Analysis on Electrical Characteristics of High-voltage GaN-based Light-emitting Diodes." Chinese Physics B 21, no. 12 (2012): 440-443. https://doi.org/10.1088/1674-1056/21/12/127201.
MLA (9th ed.) Citation吴国庆, 郭伟玲 闫薇薇 朱彦旭 刘建朋 丁艳 崔德胜. "Analysis on Electrical Characteristics of High-voltage GaN-based Light-emitting Diodes." Chinese Physics B, vol. 21, no. 12, 2012, pp. 440-443, https://doi.org/10.1088/1674-1056/21/12/127201.
Warning: These citations may not always be 100% accurate.