Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate - 陈荔群 陈阳华 李成 (Optoelectronics letters, 2014)
Keywords: Lasers; Optical Devices; Optics; Photonics; Physics; Physics and Astronomy; SiGe; SOI衬底; 光致发光; 多量子阱; 拉伸应变; 硅绝缘体; 硅锗; 谐振腔增强型; Scanning Transmission Electron Microscope Image; Quantum Confinement Effect; Apply Physic Letter; Multiple Quantum; SiGe Layer