Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

• Published in: Optoelectronics letters Vol. 10; no. 3; pp. 213 - 215
• Main Author: 陈荔群 陈阳华 李成
• Format: Journal Article
• Language: English
• Published: Heidelberg Tianjin University of Technology 01.05.2014
• Subjects: Lasers; Optical Devices; Optics; Photonics; Physics; Physics and Astronomy; SiGe; SOI衬底; 光致发光; 多量子阱; 拉伸应变; 硅绝缘体; 硅锗; 谐振腔增强型; Scanning Transmission Electron Microscope Image; Quantum Confinement Effect; Apply Physic Letter; Multiple Quantum; SiGe Layer
• ISSN: 1673-1905; 1993-5013
• DOI: 10.1007/s11801-014-4021-y

The tensile strained Ge/SiGe multiple quantum wells （MQWs） grown on a silicon-on-insulator （SOI） substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum （FWHM） is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity lijzht emitting devices.