Three-dimensional Monte Carlo simulation of bulk fin field effect transistor - 王骏成 杜刚 魏康亮 张兴 刘晓彦 (Chinese physics B, 2012)
Keywords: Computer simulation; Field effect transistors; FinFET; Monte Carlo methods; Scattering; Semiconductor devices; Silicon substrates; SiO2; Surface roughness; Three dimensional; 三维; 散射机制; 晶体管; 模拟器; 蒙特卡罗仿真; 表面粗糙度