An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO3 as the blocking layer

An air-stable photovoltaic device based on znic oxide nanoparticles （ZNP） in an inverted structure of indium tin oxide （ITO）/ZnO/poly （3-hexylthiophene） （P3HT）： [6,6]-phenyl C61-butyric acid methyl ester （PCBM）/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When th...

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Bibliographic Details
Published inOptoelectronics letters Vol. 7; no. 5; pp. 330 - 333
Main Author 宋朋飞 秦文静 丁国静 闫齐齐 杨利营 印寿根
Format Journal Article
LanguageEnglish
Published Heidelberg Tianjin University of Technology 01.09.2011
Subjects
Lasers
MoO3
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
ZnO
光伏
发电装置
电子
空气
阻挡层
高稳定性
Power Conversion Efficiency
High Hole Mobility
Inverted Device
Apply Physic Letter
Blocking Layer
Online AccessGet full text
ISSN1673-1905
1993-5013
DOI10.1007/s11801-011-1061-4

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Summary:An air-stable photovoltaic device based on znic oxide nanoparticles （ZNP） in an inverted structure of indium tin oxide （ITO）/ZnO/poly （3-hexylthiophene） （P3HT）： [6,6]-phenyl C61-butyric acid methyl ester （PCBM）/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.
Bibliography:12-1370/TN
SONG Peng-fei, QIN Wen-jing , DING Guo-jing , YAN Qi-qi , YANG Li-ying, YIN Shou-gen （1. Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China; 2. Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China）
An air-stable photovoltaic device based on znic oxide nanoparticles （ZNP） in an inverted structure of indium tin oxide （ITO）/ZnO/poly （3-hexylthiophene） （P3HT）： [6,6]-phenyl C61-butyric acid methyl ester （PCBM）/MoO3/Ag is studied. We fm.d that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-011-1061-4