A new high-voltage level-shifting circuit for half-bridge power ICs

• Published in: Journal of semiconductors Vol. 34; no. 10; pp. 155 - 160
• Main Author: 孔谋夫 陈星弼
• Format: Journal Article
• Language: English
• Published: 01.10.2013
• Subjects: Circuits; Current mirrors; Devices; Electric circuits; MEDICI; PMOS晶体管; Power supplies; Resistors; Semiconductors; Simulation; 创新; 半桥; 电平转换电路; 电源IC; 移动电路; 高电压
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/34/10/105012

In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well.