Micro-track structure analysis for 100 MeV Si ions in CR-39 by using atomic force microscopy

To analyze the micro-track structure of heavy ions in a polymer material, parameters including bulk etch rate, track etch rate, etch rate ratio, and track core size were measured. The pieces of CR-39 were exposed to 100 MeV Si ions with normal incidence and were etched in 6.25N NaOH solution at 70 ℃...

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Published inChinese physics B Vol. 22; no. 11; pp. 436 - 439
Main Author 方美华 魏志勇 张紫霞 朱立 府宇 石苗 黎光武 郭刚
Format Journal Article
LanguageEnglish
Published 01.11.2013
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/11/116105

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Summary:To analyze the micro-track structure of heavy ions in a polymer material, parameters including bulk etch rate, track etch rate, etch rate ratio, and track core size were measured. The pieces of CR-39 were exposed to 100 MeV Si ions with normal incidence and were etched in 6.25N NaOH solution at 70 ℃. Bulk etch rate was read out by a profilemeter after several hours of etching. The other parameters were obtained by using an atomic force microscope (AFM) after a short time of etching. We have measured the second etch pits and minute etch pits to obtain the track growth curve and three dimension track structures to track the core size and etch rate measurements. The local dose of the track core was calculated by the δ-ray theory. In our study, we figure out that the bulk etch rate Vb=(1.58±0.022) μm/h, the track etch rate Vt=(2.90±0.529) μ/h, the etch rate ratio V=1.84±0.031, and the track core radii r≈4.65 nm. In the meantime, we find that the micro-track development violates the traditional track-growth model. For this reason, a scenario is carried out to provide an explanation.
Bibliography:To analyze the micro-track structure of heavy ions in a polymer material, parameters including bulk etch rate, track etch rate, etch rate ratio, and track core size were measured. The pieces of CR-39 were exposed to 100 MeV Si ions with normal incidence and were etched in 6.25N NaOH solution at 70 ℃. Bulk etch rate was read out by a profilemeter after several hours of etching. The other parameters were obtained by using an atomic force microscope (AFM) after a short time of etching. We have measured the second etch pits and minute etch pits to obtain the track growth curve and three dimension track structures to track the core size and etch rate measurements. The local dose of the track core was calculated by the δ-ray theory. In our study, we figure out that the bulk etch rate Vb=(1.58±0.022) μm/h, the track etch rate Vt=(2.90±0.529) μ/h, the etch rate ratio V=1.84±0.031, and the track core radii r≈4.65 nm. In the meantime, we find that the micro-track development violates the traditional track-growth model. For this reason, a scenario is carried out to provide an explanation.
11-5639/O4
micro-track structure, bulk etch rate, track etch rate, track core size
Fang Mei-Hua, Wei Zhi-Yong, Zhang Zi-Xia, Zhu Li, Fu Yu, Shi Miao, Li Guang-Wu, Guo Gang(a) Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China b ) China Institute of Atomic Energy, Beijing 102413, China
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/11/116105