Design and fabrication of a 3.3 kV 4H-SiC MOSFET - 黄润华 陶永洪 柏松 陈刚 汪玲 刘奥 卫能 李赟 赵志飞 (Journal of semiconductors, 2015)
Keywords: 4H-SiC; Breakdown; Drains; Electric potential; Guards; Mathematical models; MOSFET; MOSFETs; Semiconductors; T细胞; Voltage; 击穿电压; 数值模拟; 漏极电流; 结构参数; 设计制作