Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage
The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor...
Saved in:
| Published in | Chinese physics B Vol. 24; no. 5; pp. 587 - 591 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2015
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/24/5/057901 |
Cover
| Abstract | The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission. |
|---|---|
| AbstractList | The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride (AlN) thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC (0001) substrate at 1100 [degres]C by metal organic chemical vapor deposition (MOCVD) under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/ mu m and the maximum emission current density is 154 mA/cm super(2) at 69.3 V for the Si-doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission. The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission. |
| Author | 侍铭 陈平 赵德刚 江德生 郑军 成步文 朱建军 刘宗顺 刘炜 李翔 赵丹梅 王启明 刘建平 张书明 杨辉 |
| AuthorAffiliation | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China |
| Author_xml | – sequence: 1 fullname: 侍铭 陈平 赵德刚 江德生 郑军 成步文 朱建军 刘宗顺 刘炜 李翔 赵丹梅 王启明 刘建平 张书明 杨辉 |
| BookMark | eNqFkE1rGzEQhkVJoY6TnxAQPfWy9ehztfQUTL8gtIekZyFrJVtFlpyVtib99ZVxyKGXXDRo5n1m4LlEFyknh9ANgY8ElFoR2fOOgJAryldiBaIfgLxBCwpCdUwxfoEWL5l36LKU3wCSAGUL9PdhFxL2Ie7xPtgpd8Wa6EZsc2yPqbs8OlzqNNs6T67g7PGcxnxoEZNGfB-68-c2_sDbKR8Tzql117jMm4aZ6vAx1B2O-YjbhtS18Z8cq9m6K_TWm1jc9XNdol9fPj-sv3V3P79-X9_edZYRVrvRi97IzQDeW-BWqH5jvKSDIaL340YOIIzkI1AyUKooZQoGbgSY1jJeMbZEH857D1N-nF2peh-KdTGa5PJcNOmVpDCQZmqJxDnaTJQyOa8PU9ib6UkT0CfX-uRRnzxqyrXQZ9eN-_QfZ0M1NeTUFIT4Kv3-md7ltH0MaftyVkouKFdcsX8BKpIe |
| CitedBy_id | crossref_primary_10_1002_aisy_201900039 crossref_primary_10_7498_aps_65_236803 crossref_primary_10_1116_1_4936383 crossref_primary_10_1080_10667857_2016_1241037 crossref_primary_10_1016_j_cplett_2016_03_034 |
| Cites_doi | 10.1116/1.591340 10.1016/j.mser.2004.12.001 10.1063/1.1482137 10.1063/1.122158 10.1063/1.4717751 10.1063/1.126377 10.1016/S0169-4332(00)00200-2 10.1063/1.1825620 10.1063/1.111312 10.1063/1.1899763 10.1063/1.126514 10.1063/1.1421223 10.1002/pssa.200983446 10.1063/1.1357449 10.1016/j.jcrysgro.2012.10.001 10.1038/nnano.2012.107 10.1063/1.357872 10.1063/1.1689398 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION 7U5 8FD H8D L7M |
| DOI | 10.1088/1674-1056/24/5/057901 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库- 镜像站点 CrossRef Solid State and Superconductivity Abstracts Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Aerospace Database Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Aerospace Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage |
| EISSN | 2058-3834 1741-4199 |
| EndPage | 591 |
| ExternalDocumentID | 10_1088_1674_1056_24_5_057901 664524848 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA -SA -S~ AAYXX ACARI ADEQX AEINN AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K 7U5 8FD H8D L7M |
| ID | FETCH-LOGICAL-c313t-df57a6b90ffc04c587baf629a157fdb6905a64d02192282238094a50ad02af833 |
| ISSN | 1674-1056 |
| IngestDate | Tue Aug 05 10:56:05 EDT 2025 Thu Apr 24 22:53:15 EDT 2025 Wed Oct 01 03:34:54 EDT 2025 Wed Feb 14 10:30:59 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 5 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c313t-df57a6b90ffc04c587baf629a157fdb6905a64d02192282238094a50ad02af833 |
| Notes | The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission. 11-5639/O4 AlN, field emission, cold cathode, negative electron affinity ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| PQID | 1786209138 |
| PQPubID | 23500 |
| PageCount | 5 |
| ParticipantIDs | proquest_miscellaneous_1786209138 crossref_primary_10_1088_1674_1056_24_5_057901 crossref_citationtrail_10_1088_1674_1056_24_5_057901 chongqing_primary_664524848 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2015-05-01 |
| PublicationDateYYYYMMDD | 2015-05-01 |
| PublicationDate_xml | – month: 05 year: 2015 text: 2015-05-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2015 |
| References | 11 12 13 14 15 16 17 18 19 1 2 Yang J (4) 2013; 22 3 5 6 7 8 9 10 |
| References_xml | – ident: 18 doi: 10.1116/1.591340 – ident: 17 doi: 10.1016/j.mser.2004.12.001 – ident: 8 doi: 10.1063/1.1482137 – ident: 5 doi: 10.1063/1.122158 – ident: 16 doi: 10.1063/1.4717751 – ident: 19 doi: 10.1063/1.126377 – ident: 7 doi: 10.1016/S0169-4332(00)00200-2 – ident: 9 doi: 10.1063/1.1825620 – ident: 6 doi: 10.1063/1.111312 – ident: 10 doi: 10.1063/1.1899763 – ident: 11 doi: 10.1063/1.126514 – ident: 13 doi: 10.1063/1.1421223 – ident: 1 doi: 10.1002/pssa.200983446 – ident: 12 doi: 10.1063/1.1357449 – ident: 3 doi: 10.1016/j.jcrysgro.2012.10.001 – ident: 15 doi: 10.1038/nnano.2012.107 – volume: 22 issn: 1674-1056 year: 2013 ident: 4 publication-title: Chin. Phys. B – ident: 2 doi: 10.1063/1.357872 – ident: 14 doi: 10.1063/1.1689398 |
| SSID | ssj0061023 ssib054405859 ssib000804704 |
| Score | 2.0418098 |
| Snippet | The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride... |
| SourceID | proquest crossref chongqing |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 587 |
| SubjectTerms | 6H-SiC AlN薄膜 Aluminum nitride Cold cathodes Current density Electric fields Field emission Silicon carbide Si掺杂 Thin films Volt-ampere characteristics 场发射特性 导通电压 微尺度 金属有机化学气相沉积 阴极结构 |
| Title | Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage |
| URI | http://lib.cqvip.com/qk/85823A/201505/664524848.html https://www.proquest.com/docview/1786209138 |
| Volume | 24 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIOP databaseName: IOP Science Platform customDbUrl: eissn: 2058-3834 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0061023 issn: 1674-1056 databaseCode: IOP dateStart: 20080101 isFulltext: true titleUrlDefault: https://iopscience.iop.org/ providerName: IOP Publishing |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1ba9swFBZdx2AvY1eWdRsajL0ENb5ItvxYQruutGkgCYS9CMW20kBqp0vy0j-zv7pzLDl2oLBuLyI5jmXh78vRkXQuhHzNTSRT9Gr0vdQwDhYCkzqLAJA4CHKf-5nBAOerQXQ-4RdTMT04-N3yWtpuZsfp_YNxJf-DKsgAV4yS_Qdkd52CAD4DvtACwtA-EuNFgZmVbru36FfH1vDCcwxTW0KjsTQ05o_FBLHbXza57LbIylWeWYfNBbNfTpaD7hyX43hyMFr0u2vQJlXWWrtNu8SyczAcBpdBm230vv8QluDO17nbJFk3dZxHVcHg7lU9O1ZeBFbNDVuynze6tKqPfdeN-GLhtrJBPoLb5u0NCl807oBOp0YxByoIl_HaysCQwQPopK2IbTC1I5xoaVUMmHU92jnaZ1bExIOzAGhO3JCon4tBLxyaKotGq6t27u3BtTqbXF6q8el0_G11x7AsGR7fuxotT8jTAKYNrA3y43rYsp88HjfrWcHB_JVoH1pTIMK8GLjir0dSh5BJ2dvJegHviZ4dFyb4uCmL-R2AsG8o7dsJlfEzfkleuFULPbEUfEUO8uI1eTa0gL8h90hEikSkbSJSJCJ1RKQNEWlpqCMiBSLSmogUiEgrItKyAGmf7ohIkYgUiEgdEakj4lsyOTsd98-ZK-rB0tAPNywzItbRLPGMST2eChnPtImCRPsiNtksSjyhI56B6ZkE6OIcSi_hWngaRNrIMHxHDouyyN8TCld8kfHIwBzJ4yyVqU44zE9S5qFnQq9DjnZvU61s8hYV4Uk-l1x2CK_fr0pdPnwsy7JUlV-GlAohUgiRCrgSykLUIce72-o-_3LDlxo8Baobz-N0kZfbtfJjCZRK_FB-eMRvjsjz5t_1kRwCaPknMIg3s88VKf8A0JGsNQ |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Thin+film+micro-scaled+cold+cathode+structures+of+undoped+and+Si-doped+AlN+grown+on+SiC+substrate+with+low+turn-on+voltage&rft.jtitle=Chinese+physics+B&rft.au=Shi%2C+Ming&rft.au=Chen%2C+Ping&rft.au=Zhao%2C+De-Gang&rft.au=Jiang%2C+De-Sheng&rft.date=2015-05-01&rft.issn=1674-1056&rft.eissn=1741-4199&rft.volume=24&rft.issue=5&rft.spage=057901&rft.epage=1-057901-5&rft_id=info:doi/10.1088%2F1674-1056%2F24%2F5%2F057901&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |