Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si：H/a-SiGe：H tandem solar cells
Phosphorous-doped hydrogenated nanocrystalline silicon oxide （n-nc-SiOx：H） films are prepared via radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. Increasing deposition power during n-nc-SiOx：H film growth process can enhance the formation of nanocrystalline and obtain a uniform...
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| Published in | Chinese physics B Vol. 25; no. 4; pp. 243 - 248 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.04.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/25/4/046101 |
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| Abstract | Phosphorous-doped hydrogenated nanocrystalline silicon oxide （n-nc-SiOx：H） films are prepared via radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. Increasing deposition power during n-nc-SiOx：H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiOx：H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiOx matrix with higher crystalline volume fraction （Ic） and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si：H/a-SiGe：H tandem solar cells acting as an n-nc-SiOx：H back reflector prepared by the gradient power during deposition. Compared with the sample with SiOx back reflector, with a constant power used in deposition process, the sample with gradient power SiOx back reflector can enhance the total short-circuit current density （Jsc） and the initial efficiency of a-Si：H/a-SiGe：H tandem solar cells by 8.3% and 15.5%, respectively. |
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| AbstractList | Phosphorous-doped hydrogenated nanocrystalline silicon oxide (n-nc-SiO sub( x):H) films are prepared via radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). Increasing deposition power during n-nc-SiO sub( x):H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO sub(x):H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiO sub(x) matrix with higher crystalline volume fraction (I sub(c)) and have a lower lateral conductivity. This uniform microstructure indicates that the higher I sub(c) can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO sub(x):H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO sub(x) back reflector, with a constant power used in deposition process, the sample with gradient power SiO sub(x) back reflector can enhance the total short-circuit current density (J sub(sc)) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively. Phosphorous-doped hydrogenated nanocrystalline silicon oxide （n-nc-SiOx：H） films are prepared via radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. Increasing deposition power during n-nc-SiOx：H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiOx：H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiOx matrix with higher crystalline volume fraction （Ic） and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si：H/a-SiGe：H tandem solar cells acting as an n-nc-SiOx：H back reflector prepared by the gradient power during deposition. Compared with the sample with SiOx back reflector, with a constant power used in deposition process, the sample with gradient power SiOx back reflector can enhance the total short-circuit current density （Jsc） and the initial efficiency of a-Si：H/a-SiGe：H tandem solar cells by 8.3% and 15.5%, respectively. |
| Author | 郑志远 张思齐 梁田 高禄 高华 张自力 李天天 杨铁 方家 张德坤 孙建 魏长春 许盛之 王广才 刘彩池 赵颖 张晓丹 |
| AuthorAffiliation | Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, China Collaborative Innovation Center of Chemical Science and Engineering （Tianjin）, Tianjin 300072, China School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, China Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education, Nankai University, Tianjin 300071, China |
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| DocumentTitleAlternate | Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si：H/a-SiGe：H tandem solar cells |
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| Notes | gradient deposition power, n-nc-SiOx：H films, back reflector, Tandem solar cells Phosphorous-doped hydrogenated nanocrystalline silicon oxide （n-nc-SiOx：H） films are prepared via radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. Increasing deposition power during n-nc-SiOx：H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiOx：H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiOx matrix with higher crystalline volume fraction （Ic） and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si：H/a-SiGe：H tandem solar cells acting as an n-nc-SiOx：H back reflector prepared by the gradient power during deposition. Compared with the sample with SiOx back reflector, with a constant power used in deposition process, the sample with gradient power SiOx back reflector can enhance the total short-circuit current density （Jsc） and the initial efficiency of a-Si：H/a-SiGe：H tandem solar cells by 8.3% and 15.5%, respectively. 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| Snippet | Phosphorous-doped hydrogenated nanocrystalline silicon oxide （n-nc-SiOx：H） films are prepared via radio frequency plasma enhanced chemical vapor deposition... Phosphorous-doped hydrogenated nanocrystalline silicon oxide (n-nc-SiO sub( x):H) films are prepared via radio frequency plasma enhanced chemical vapor... |
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| SubjectTerms | Deposition Microstructure Nanocrystals Photovoltaic cells Reflectors Silicon dioxide Solar cells Solar power generation 串联 太阳能电池 射频等离子体增强化学气相沉积 控制结构 电导率 电沉积过程 纳米氧化硅 非晶硅薄膜 |
| Title | Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si：H/a-SiGe：H tandem solar cells |
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