蔡树军, 何. 杨. 蔚. 刘. 王. 李. 芦. 冯. (2016). High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate. Chinese physics B, 25(6), 463-467. https://doi.org/10.1088/1674-1056/25/6/067206
Chicago Style (17th ed.) Citation蔡树军, 何泽召 杨克武 蔚翠 刘庆彬 王晶晶 李佳 芦伟立 冯志红. "High Temperature Characteristics of Bilayer Epitaxial Graphene Field-effect Transistors on SiC Substrate." Chinese Physics B 25, no. 6 (2016): 463-467. https://doi.org/10.1088/1674-1056/25/6/067206.
MLA (9th ed.) Citation蔡树军, 何泽召 杨克武 蔚翠 刘庆彬 王晶晶 李佳 芦伟立 冯志红. "High Temperature Characteristics of Bilayer Epitaxial Graphene Field-effect Transistors on SiC Substrate." Chinese Physics B, vol. 25, no. 6, 2016, pp. 463-467, https://doi.org/10.1088/1674-1056/25/6/067206.
Warning: These citations may not always be 100% accurate.