Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate - 王卓 李鹏程 张波 范远航 徐青 罗小蓉 (Chinese physics letters, 2015)
Keywords: Drains; Drift; Gates; MOSFET; MOSFETs; Oxides; Semiconductor devices; Trenches; Voltage; 低导通电阻; 击穿电压; 掺杂浓度; 沟槽; 漂移区; 金属氧化物半导体场效应晶体管