One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation - 张珺 郭宇锋 徐跃 林宏 杨慧 洪洋 姚佳飞 (Chinese physics B, 2015)
Keywords: Breakdown; Depletion; Devices; Electric potential; Electronic devices; Mathematical analysis; Mathematical models; RESURF器件; Silicon substrates; SOI; Voltage; 一维模型; 击穿电压; 功率器件; 基础; 电压模型; 线性