Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing - 马刘红 韩伟华 王昊 吕奇峰 张望 杨香 杨富华 (Chinese physics B, 2016)
Keywords: Devices; Electron transport; Femtosecond; Gates; Nanowires; Semiconductor devices; Silicon substrates; Transistors; 制作; 晶体管; 栅极电压; 激光直写; 电子输运性质; 电子迁移率; 硅纳米线; 飞秒激光