杨富华, 马. 韩. 王. 吕. 张. 杨. (2016). Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing. Chinese physics B, 25(6), 552-556. https://doi.org/10.1088/1674-1056/25/6/068103
Chicago Style (17th ed.) Citation杨富华, 马刘红 韩伟华 王昊 吕奇峰 张望 杨香. "Electronic Transport Properties of Silicon Junctionless Nanowire Transistors Fabricated by Femtosecond Laser Direct Writing." Chinese Physics B 25, no. 6 (2016): 552-556. https://doi.org/10.1088/1674-1056/25/6/068103.
MLA (9th ed.) Citation杨富华, 马刘红 韩伟华 王昊 吕奇峰 张望 杨香. "Electronic Transport Properties of Silicon Junctionless Nanowire Transistors Fabricated by Femtosecond Laser Direct Writing." Chinese Physics B, vol. 25, no. 6, 2016, pp. 552-556, https://doi.org/10.1088/1674-1056/25/6/068103.