Recovery of PMOSFET NBTI under different conditions - 曹艳荣 杨毅 曹成 何文龙 郑雪峰 马晓华 郝跃 (Chinese physics B, 2015)
Keywords: Bias; Field effect transistors; Instability; NBTI; Niobium base alloys; Oxides; Recovery; Semiconductor devices; Stability; 不稳定性; 可靠性问题; 器件; 氧化物电荷; 负偏压温度; 金属氧化物半导体场效应晶体管; 降解过程