Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor - 刘玉荣 赵高位 黎沛涛 姚若河 (Chinese physics B, 2016)
Keywords: Channels; Electrical properties; Semiconductor devices; Silicon; Si掺杂; Stability; Thin film transistors; Thin films; Zinc oxide; 原子力显微镜分析; 应力; 有源层; 氧化锌; 电性能; 稳定性; 薄膜晶体管