Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO...
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| Published in | Chinese physics B Vol. 25; no. 8; pp. 452 - 457 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/25/8/088503 |
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| Abstract | Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress. |
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| AbstractList | Si-doped zinc oxide (SZO) thin films are deposited by using a co-sputtering method, and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures. The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated. Moreover, the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure. The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm, and the optical band gap of the SZO film gradually increases with increasing Si content. The Si-doping can effectively suppress the grain growth of ZnO, revealed by atomic force microscope analysis. Compared with that of the undoped ZnO TFT, the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 10 super(-12) A, and thus the on/off current ratio is increased by more than two orders of magnitude. In summary, the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 10 super(6) and superior stability under gate-bias and drain-bias stress. Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress. |
| Author | 刘玉荣 赵高位 黎沛涛 姚若河 |
| AuthorAffiliation | The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China National Engineering Technology Research Center for Mobile Ultrasonic Detection, South China University of Technology, Guangzhou 510640, China Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China |
| Author_xml | – sequence: 1 fullname: 刘玉荣 赵高位 黎沛涛 姚若河 |
| BookMark | eNqFkM1q3TAQhUVJoTdpHiEguurGtX4sWaarEvoTCHSTrMVYHicqsnQj6YbevkPeub7ckEI3Wc0wc745zDklJzFFJOSCs0-cGdNy3XcNZ0q3QrWmXUeKyTdkI5gyjTSyOyGbF807clrKL8Y0Z0JuyNPVss3pEReMlfpI6z1SDOhq9g4C3WKeU14gOqQQJzp6KE2pGUuhpcLog697mmY67SA04Kp_xCbAHjNOtKxblyL946Oj6befsP3Xrk4-NrMPC60ZYvGlpvyevJ0hFDx_rmfk9tvXm8sfzfXP71eXX64bJ7msTSdVLzoGgjmFGoyelAPskCkFE3IcNNejNtDLYey1QC1nZRDGQUntWNfJM_LxeHf9_WGHpdrFF4chQMS0K5YbpWQ_rD6rVB2lLqdSMs52m_0CeW85s4f47SFae4jWCmWNPca_cp__45yvUH2K67s-vEp_eKbvU7x78PHuxVbrQWvVCSH_Ar9Dmyo |
| CitedBy_id | crossref_primary_10_1155_2023_7261186 |
| Cites_doi | 10.1109/TED.2013.2279401 10.1016/j.tsf.2012.12.109 10.1063/1.2990657 10.1038/nature03090 10.7498/aps.63.098503 10.1109/TED.2012.2198064 10.1063/1.2458457 10.1016/j.tsf.2011.04.079 10.1063/1.2425020 10.1063/1.3464964 10.1063/1.3232179 10.1063/1.2838380 10.1007/s13391-013-2185-4 10.1016/j.tsf.2013.08.073 10.1002/adma.v22.48 10.1021/am5037934 10.1021/am3008278 10.1109/TED.2012.2191409 10.1063/1.3570641 10.1109/LED.2013.2272084 10.1063/1.4818728 10.1021/am400943z |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION 7U5 8FD H8D L7M |
| DOI | 10.1088/1674-1056/25/8/088503 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库- 镜像站点 CrossRef Solid State and Superconductivity Abstracts Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Aerospace Database Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Aerospace Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor |
| EISSN | 2058-3834 1741-4199 |
| EndPage | 457 |
| ExternalDocumentID | 10_1088_1674_1056_25_8_088503 669665422 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA -SA -S~ AAYXX ACARI ADEQX AEINN AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K 7U5 8FD H8D L7M |
| ID | FETCH-LOGICAL-c313t-4357240a20c5e6a86d5cae4e055ade1e9616b68a739b762e63f58eab9536c0443 |
| ISSN | 1674-1056 |
| IngestDate | Thu Oct 02 12:11:35 EDT 2025 Thu Apr 24 23:10:23 EDT 2025 Wed Oct 01 03:35:01 EDT 2025 Wed Feb 14 10:16:40 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 8 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c313t-4357240a20c5e6a86d5cae4e055ade1e9616b68a739b762e63f58eab9536c0443 |
| Notes | Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress. thin film transistor （TFT）, silicon-doped zinc oxide, dual-active-layer structure, bias-stress stability Yu-Rong Liu, Gao-Wei Zhao, Pai-To Lai,Ruo-He Yao（ 1 The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China; 2National Engineering Technology Research Center for Mobile Ultrasonic Detection, South China University of Technology, Guangzhou 510640, China ; 3 Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China） 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| PQID | 1855379435 |
| PQPubID | 23500 |
| PageCount | 6 |
| ParticipantIDs | proquest_miscellaneous_1855379435 crossref_primary_10_1088_1674_1056_25_8_088503 crossref_citationtrail_10_1088_1674_1056_25_8_088503 chongqing_primary_669665422 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2016-08-01 |
| PublicationDateYYYYMMDD | 2016-08-01 |
| PublicationDate_xml | – month: 08 year: 2016 text: 2016-08-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2016 |
| References | 22 23 24 25 Chen Y Y (9) 2014; 23 Sze S M (15) 1981 10 11 12 13 14 16 17 18 19 1 2 3 4 5 6 8 Qian H M (7) 2015; 24 20 21 |
| References_xml | – ident: 2 doi: 10.1109/TED.2013.2279401 – ident: 23 doi: 10.1016/j.tsf.2012.12.109 – ident: 22 doi: 10.1063/1.2990657 – volume: 24 issn: 1674-1056 year: 2015 ident: 7 publication-title: Chin. Phys. – volume: 23 issn: 1674-1056 year: 2014 ident: 9 publication-title: Chin. Phys. – ident: 1 doi: 10.1038/nature03090 – ident: 4 doi: 10.7498/aps.63.098503 – ident: 14 doi: 10.1109/TED.2012.2198064 – ident: 19 doi: 10.1063/1.2458457 – ident: 6 doi: 10.1016/j.tsf.2011.04.079 – ident: 18 doi: 10.1063/1.2425020 – ident: 24 doi: 10.1063/1.3464964 – ident: 17 doi: 10.1063/1.3232179 – ident: 25 doi: 10.1063/1.2838380 – ident: 8 doi: 10.1007/s13391-013-2185-4 – ident: 10 doi: 10.1016/j.tsf.2013.08.073 – ident: 12 doi: 10.1002/adma.v22.48 – ident: 16 doi: 10.1021/am5037934 – ident: 21 doi: 10.1021/am3008278 – ident: 3 doi: 10.1109/TED.2012.2191409 – ident: 20 doi: 10.1063/1.3570641 – ident: 5 doi: 10.1109/LED.2013.2272084 – ident: 11 doi: 10.1063/1.4818728 – year: 1981 ident: 15 publication-title: Physics of semiconductor devices – ident: 13 doi: 10.1021/am400943z |
| SSID | ssj0061023 ssib054405859 ssib000804704 |
| Score | 2.0766664 |
| Snippet | Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and... Si-doped zinc oxide (SZO) thin films are deposited by using a co-sputtering method, and used as the channel active layers of ZnO-based TFTs with single and... |
| SourceID | proquest crossref chongqing |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 452 |
| SubjectTerms | Channels Electrical properties Semiconductor devices Silicon Si掺杂 Stability Thin film transistors Thin films Zinc oxide 原子力显微镜分析 应力 有源层 氧化锌 电性能 稳定性 薄膜晶体管 |
| Title | Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor |
| URI | http://lib.cqvip.com/qk/85823A/201608/669665422.html https://www.proquest.com/docview/1855379435 |
| Volume | 25 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIOP databaseName: IOP Science Platform customDbUrl: eissn: 2058-3834 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0061023 issn: 1674-1056 databaseCode: IOP dateStart: 20080101 isFulltext: true titleUrlDefault: https://iopscience.iop.org/ providerName: IOP Publishing |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1fb9MwELfKEBIviL-iDJCReKu8Nn_suo8IMQoSUE2d2FtkO44WqUsGaSTYd-A78FE527GTjgkYL1HqxBfJ9-v5fPb9DqGXFIBRJFFOIjlXJE1nggiz5ypZXtBEay5tovCHj2x5nL4_oSej0c_BqaV2Kw_UxZV5Jf-jVWgDvZos2WtoNgiFBrgH_cIVNAzXf9KxiwjYAJ8_r-jK2tiRP7-UEyBL0ZAuNwR8Qnsq1u6vm3QsIqzhIxvx3VTvnDTwFJbKk4uyUpP6W2nYeQ_7H_CtsiJFuTkzRSaqxrMW96wHp7a2ZRc5aQbFncvWmv2WHNXdrOni1jZm-1bU5LMuw8uuWPZKlGRdBwPlXj1qa7LUw6hFxMKZOW9o2TyFKcCRintL7FKgO8TxgVnlnFomhN8NPhhJE3vw0kx-iyHLsJkNodcuzfal6S8cSrTb8ZxnRlhmhGUxzXjmxNxAN2OYN0xxkHefVn6uZ4b4wizp_fd9jhjn09A2jemUT50Yw-BxCqP7BfySXU9o1xGw3s36LrrTLUvwK4exe2ikq_vo1sop7wH6MUAaLisMSMM90vAAaRiQhgdIwwFpuC7wFUjDHdKwARe24Jr2tzjgDPc4e4iOD9-sXy9JV8iDqCRKtgRc8jl4jiKeKaqZ4CynSuhUzygVuY70gkVMMi7myULCIGuWFJRrIc3RAjVL0-QR2qvqSj9GmEthUhdyXkiRqlRwWBzyJOczJYVWUo3Rfhjg7NwRtmSMLUyR7Tgeo9QPeaY6DnxTimWT_VH5Y3QQunmZf-nwwuszA3Nt9uBEpeu2ycA9pokhZaRPrit0H93u_0lP0d72a6ufgUe8lc8tKH8B6OGzHw |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Improvement+in+the+electrical+performance+and+bias-stress+stability+of+dual-active-layered+silicon+zinc+oxide%2Fzinc+oxide+thin-film+transistor&rft.jtitle=Chinese+physics+B&rft.au=Liu%2C+Yu-Rong&rft.au=Zhao%2C+Gao-Wei&rft.au=Lai%2C+Pai-To&rft.au=Yao%2C+Ruo-He&rft.date=2016-08-01&rft.issn=1674-1056&rft.volume=25&rft.issue=8&rft.spage=88503&rft_id=info:doi/10.1088%2F1674-1056%2F25%2F8%2F088503&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_1056_25_8_088503 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |