姚若河, 刘. 赵. 黎. (2016). Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor. Chinese physics B, 25(8), 452-457. https://doi.org/10.1088/1674-1056/25/8/088503
Chicago Style (17th ed.) Citation姚若河, 刘玉荣 赵高位 黎沛涛. "Improvement in the Electrical Performance and Bias-stress Stability of Dual-active-layered Silicon Zinc Oxide/zinc Oxide Thin-film Transistor." Chinese Physics B 25, no. 8 (2016): 452-457. https://doi.org/10.1088/1674-1056/25/8/088503.
MLA (9th ed.) Citation姚若河, 刘玉荣 赵高位 黎沛涛. "Improvement in the Electrical Performance and Bias-stress Stability of Dual-active-layered Silicon Zinc Oxide/zinc Oxide Thin-film Transistor." Chinese Physics B, vol. 25, no. 8, 2016, pp. 452-457, https://doi.org/10.1088/1674-1056/25/8/088503.