Frequency doubled femtosecond Ti：sapphire laser with an assisted enhancement cavity
We report an enhancement cavity for femtosecond Ti：sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting pulses have an average power of 1 W and a pulse duration of 80 fs. By placing a BBO crystal at the focus of the cavity, we obtain a 392-mW i...
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| Published in | Chinese physics B Vol. 25; no. 1; pp. 604 - 607 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.01.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/25/1/014205 |
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| Abstract | We report an enhancement cavity for femtosecond Ti：sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting pulses have an average power of 1 W and a pulse duration of 80 fs. By placing a BBO crystal at the focus of the cavity, we obtain a 392-mW intracavity doubled-frequency laser, corresponding to a conversion efficiency of 43%. The output power has a long-term stability with a root mean square （RMS） of 0.036%. |
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| AbstractList | We report an enhancement cavity for femtosecond Ti：sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting pulses have an average power of 1 W and a pulse duration of 80 fs. By placing a BBO crystal at the focus of the cavity, we obtain a 392-mW intracavity doubled-frequency laser, corresponding to a conversion efficiency of 43%. The output power has a long-term stability with a root mean square （RMS） of 0.036%. We report an enhancement cavity for femtosecond Ti:sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting pulses have an average power of 1 W and a pulse duration of 80 fs. By placing a BBO crystal at the focus of the cavity, we obtain a 392-mW intracavity doubled-frequency laser, corresponding to a conversion efficiency of 43%. The output power has a long-term stability with a root mean square (RMS) of 0.036%. |
| Author | 张金伟 韩海年 侯磊 张龙 于子蛟 李德华 魏志义 |
| AuthorAffiliation | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
| Author_xml | – sequence: 1 fullname: 张金伟 韩海年 侯磊 张龙 于子蛟 李德华 魏志义 |
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| Cites_doi | 10.1364/OE.20.023542 10.1364/OL.16.001400 10.1109/3.211 10.1364/OL.18.001822 10.1119/1.1286663 10.1038/nature03851 10.1109/3.137 10.1140/epjd/e2004-00162-7 10.1103/PhysRevLett.98.113004 10.1103/PhysRevLett.94.193201 10.1364/OL.19.000637 |
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| Notes | We report an enhancement cavity for femtosecond Ti：sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting pulses have an average power of 1 W and a pulse duration of 80 fs. By placing a BBO crystal at the focus of the cavity, we obtain a 392-mW intracavity doubled-frequency laser, corresponding to a conversion efficiency of 43%. The output power has a long-term stability with a root mean square （RMS） of 0.036%. femtosecond laser, enhancement cavity, frequency doubling, laser spectroscopy 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 1 Dong Y (9) 2014; 23 12 2 3 4 5 6 7 8 10 |
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| Snippet | We report an enhancement cavity for femtosecond Ti：sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the... We report an enhancement cavity for femtosecond Ti:sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting... |
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| SubjectTerms | BBO晶体 Conversion Femtosecond Holes Lasers Mean square values Placing Pulse duration Stability 内腔倍频激光器 均方根 增强腔 脉冲持续时间 蓝宝石 钛 飞秒 |
| Title | Frequency doubled femtosecond Ti：sapphire laser with an assisted enhancement cavity |
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