Study of the dose rate effect of 180 nm nMOSFETs - 何宝平 姚志斌 盛江坤 王祖军 黄绍燕 刘敏波 肖志刚 (Chinese physics C, 2015)
Keywords: Annealing; Damage; Degradation; Dosage; Leakage; Leakage current; nMOSFET; Simulation; Trenches; 仿真结果; 低剂量率; 剂量率效应; 沟槽隔离; 纳米; 辐射诱导; 辐照实验