Effect of additional silicon on titanium/4H-SiC contacts properties - 张永平 陈之战 卢吴越 谈嘉慧 程越 石旺舟 (Chinese physics B, 2014)
Keywords: 4H-SiC; Annealing; Atomic force microscopy; Electrodes; Scanning electron microscopy; Silicon; Titanium; Trays; X-rays; X-射线光电子能谱; X-射线衍射; 原子力显微镜; 扫描电子显微镜; 接触特性; 欧姆接触; 硅