Reduction of signal reflection along through silicon via channel in high-speed three-dimensional integration circuit
The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution laye...
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| Published in | Chinese physics B Vol. 23; no. 3; pp. 583 - 590 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.03.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/23/3/038401 |
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| Summary: | The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution layers (RDLs), TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflec- tion of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient ($11) and signal transmission coefficient ($21) are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance (RLGC) elements of the TSV channel are iterated from scattering (S)-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure (HFSS) simulation software by Ansoft. |
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| Bibliography: | three-dimensional integrated circuit, through silicon via channel, signal reflection, S-parameters The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution layers (RDLs), TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflec- tion of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient ($11) and signal transmission coefficient ($21) are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance (RLGC) elements of the TSV channel are iterated from scattering (S)-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure (HFSS) simulation software by Ansoft. 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ISSN: | 1674-1056 2058-3834 1741-4199 |
| DOI: | 10.1088/1674-1056/23/3/038401 |