Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exh...

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Bibliographic Details
Published inChinese physics B Vol. 22; no. 9; pp. 591 - 594
Main Author 汤振杰 李荣 殷江
Format Journal Article
LanguageEnglish
Published 01.09.2013
Subjects
Al2O3
Aluminum
Banded structure
Charge
Data storage
Flash memory (computers)
Memory devices
Performance enhancement
Trapping
Valleys
俘获
性能改进
捕获
电荷
组分
调制
闪存存储器
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/9/097701

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Summary:A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.
Bibliography:A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.
composition modulated films, memory device, charge trap, atomic layer deposition
11-5639/O4
Tang Zhen-Jie, Li Rong, and Yin Jiang（ a） College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China b） School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China c） Department of Materials Science and Engineering, National Laboratory of Solid State Mierostructures, Nanjing University, Nanjing 210093, China
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/9/097701