Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer - 汤振杰 李荣 殷江 (Chinese physics B, 2013)
Keywords: Al2O3; Aluminum; Banded structure; Charge; Data storage; Flash memory (computers); Memory devices; Performance enhancement; Trapping; Valleys; 俘获; 性能改进; 捕获; 电荷; 组分; 调制; 闪存存储器