Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer
A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exh...
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| Published in | Chinese physics B Vol. 22; no. 9; pp. 591 - 594 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.09.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/22/9/097701 |
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| Abstract | A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. |
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| AbstractList | A composition-modulated (HfO sub(2)) sub(x)(Al sub(2)O3) sub(1-x) charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO sub(2)) sub(x)(Al sub(2)O sub(3)) sub(1-x) as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. |
| Author | 汤振杰 李荣 殷江 |
| AuthorAffiliation | College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China Department of Materials Science and Engineering, National Laboratory of Solid State Mierostructures, Nanjing University, Nanjing 210093, China |
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| Cites_doi | 10.1063/1.4737394 10.1088/1674-1056/20/10/108501 10.1109/TED.2006.870273 10.1109/TED.2005.845150 10.1063/1.3078279 10.1088/0256-307X/27/9/097701 10.1149/1.3518706 10.1088/1674-1056/19/4/047308 10.1016/j.matlet.2012.10.024 10.1088/1674-1056/21/7/078501 10.1063/1.3531559 10.1002/adma.201000030 10.1063/1.1492024 10.1088/1674-1056/19/10/108102 10.1109/55.877205 10.1063/1.3293291 10.1016/j.sse.2004.06.009 10.1016/S0038-1101(00)00012-5 10.1109/16.69916 10.1088/0034-4885/69/2/R02 |
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| DocumentTitleAlternate | Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer |
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| Notes | A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. composition modulated films, memory device, charge trap, atomic layer deposition 11-5639/O4 Tang Zhen-Jie, Li Rong, and Yin Jiang（ a） College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China b） School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China c） Department of Materials Science and Engineering, National Laboratory of Solid State Mierostructures, Nanjing University, Nanjing 210093, China ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Li W (4) 2010; 19 11 12 Zheng Z W (8) 2011; 20 13 14 16 17 18 19 Robertson J (15) 2006; 69 1 5 Choi Y O (3) 2010; 27 6 Peng Y H (7) 2012; 21 9 Wang L (2) 2010; 19 20 10 |
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| Snippet | A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak... A composition-modulated (HfO sub(2)) sub(x)(Al sub(2)O3) sub(1-x) charge trapping layer is proposed for charge trap flash memory by controlling the Al atom... |
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| SubjectTerms | Al2O3 Aluminum Banded structure Charge Data storage Flash memory (computers) Memory devices Performance enhancement Trapping Valleys 俘获 性能改进 捕获 电荷 组分 调制 闪存存储器 |
| Title | Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer |
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