殷江, 汤. 李. (2013). Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer. Chinese physics B, 22(9), 591-594. https://doi.org/10.1088/1674-1056/22/9/097701
Chicago Style (17th ed.) Citation殷江, 汤振杰 李荣. "Performance Improvement of Charge Trap Flash Memory by Using a Composition-modulated High-k Trapping Layer." Chinese Physics B 22, no. 9 (2013): 591-594. https://doi.org/10.1088/1674-1056/22/9/097701.
MLA (9th ed.) Citation殷江, 汤振杰 李荣. "Performance Improvement of Charge Trap Flash Memory by Using a Composition-modulated High-k Trapping Layer." Chinese Physics B, vol. 22, no. 9, 2013, pp. 591-594, https://doi.org/10.1088/1674-1056/22/9/097701.
Warning: These citations may not always be 100% accurate.