Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni - 韩林超 申华军 刘可安 王弋宇 汤益丹 白云 许恒宇 吴煜东 刘新宇 (Journal of semiconductors, 2014)
Keywords: 4H-SiC; Adhesion; Carbon; Contact resistance; Nickel; Raman spectroscopy; Semiconductors; Silicon carbide; Titanium; Titanium base alloys; 复合材料结构; 欧姆接触; 界面相; 粘合性; 衬底; 钛; 镍硅化物