刘新宇, 韩. 申. 刘. 王. 汤. 白. 许. 吴. (2014). Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni. Journal of semiconductors, 35(7), 15-18. https://doi.org/10.1088/1674-4926/35/7/072003
Chicago Style (17th ed.) Citation刘新宇, 韩林超 申华军 刘可安 王弋宇 汤益丹 白云 许恒宇 吴煜东. "Improved Adhesion and Interface Ohmic Contact on N-type 4H-SiC Substrate by Using Ni/Ti/Ni." Journal of Semiconductors 35, no. 7 (2014): 15-18. https://doi.org/10.1088/1674-4926/35/7/072003.
MLA (9th ed.) Citation刘新宇, 韩林超 申华军 刘可安 王弋宇 汤益丹 白云 许恒宇 吴煜东. "Improved Adhesion and Interface Ohmic Contact on N-type 4H-SiC Substrate by Using Ni/Ti/Ni." Journal of Semiconductors, vol. 35, no. 7, 2014, pp. 15-18, https://doi.org/10.1088/1674-4926/35/7/072003.
Warning: These citations may not always be 100% accurate.