Improvement of carrier distribution in dual wavelength light-emitting diodes
The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts w...
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| Published in | Journal of semiconductors Vol. 34; no. 5; pp. 87 - 89 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/34/5/054008 |
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| Abstract | The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs. |
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| AbstractList | The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs. |
| Author | 司朝 魏同波 张宁 马骏 王军喜 李晋闽 |
| AuthorAffiliation | Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China |
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| DocumentTitleAlternate | Improvement of carrier distribution in dual wavelength light-emitting diodes |
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| Notes | The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs. 11-5781/TN LED; dual wavelength; quantum barrier; holes injection; carrier distribution Si Zhao, Wei Tongbo, Zhang Ning, Ma Jun, Wang Junxi, and Li Jinmin（ Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China） ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| SubjectTerms | Barriers Indium Injection current Light-emitting diodes Quantum wells Semiconductors Spectral emittance Wavelengths 光致发光光谱 双波长 发光二极管 注入电流 电致发光 蓝色光 载流子分布 量子阱 |
| Title | Improvement of carrier distribution in dual wavelength light-emitting diodes |
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