Optoelectronic characteristics of CuO nanorods

Optoelectronic characteristics of p-type CuO nanorods, synthesized by a simple hydrothermal method, were investi- gated at different atmospheres and oxygen pressures. The CuO nanorods have lower resistance in air than in a vacuum, unlike the n-type semiconductors. This is explained in terms of the s...

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Published inChinese physics B Vol. 22; no. 5; pp. 554 - 556
Main Author 谢德华 王菲菲 吕浩 杜敏永 徐文杰
Format Journal Article
LanguageEnglish
Published 01.05.2013
Subjects
ATMOSPHERES
Barometric pressure
COPPER OXIDE
N-type semiconductors
n-型
Nanomaterials
Nanorods
Optoelectronics
PRESSURE
ROD
SEMICONDUCTORS
光电特性
半导体
氧化铜
氧气压力
水热法合成
电阻比
纳米棒
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/5/058103

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Summary:Optoelectronic characteristics of p-type CuO nanorods, synthesized by a simple hydrothermal method, were investi- gated at different atmospheres and oxygen pressures. The CuO nanorods have lower resistance in air than in a vacuum, unlike the n-type semiconductors. This is explained in terms of the surface accumulation conduction. Measurements at different oxygen pressures indicate that oxygen has an important effect on the optoelectronic properties of p-type nanoma- terials.
Bibliography:Optoelectronic characteristics of p-type CuO nanorods, synthesized by a simple hydrothermal method, were investi- gated at different atmospheres and oxygen pressures. The CuO nanorods have lower resistance in air than in a vacuum, unlike the n-type semiconductors. This is explained in terms of the surface accumulation conduction. Measurements at different oxygen pressures indicate that oxygen has an important effect on the optoelectronic properties of p-type nanoma- terials.
CuO nanorod, optoelectronic characteristics
Xie De-Hua, Wang Fei-Fei, Lti Hao, Du Min-Yong, and Xu Wen-Jie（ School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China）
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/5/058103